Fairchild FDB8896 service manual

May 2008

FDB8896

N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r

and fast switching speed.

DS(ON)

Applications

• DC/DC converters

GATE

SOURCE

TO-263AB

FDB SERIES

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V V

I

E P T

D

DSS GS

AS

D

, T

J

STG

Drain to Source Voltage 30 V Gate to Source Voltage ±20 V Drain Current Continuous (T Continuous (T Continuous (T

= 25oC, VGS = 10V) (Note 1)

C

= 25oC, VGS = 4.5V) (Note 1) 85 A

C

= 25oC, VGS = 10V, with R

amb

Pulsed Figure 4 A Single Pulse Avalanche Energy (Note 2) 74 mJ Power dissipation 80 W Derate above 25

o

C0.53W/

Operating and Storage Te mperature -55 to 175

DRAIN

(FLANGE)

C

= 25°C unless otherwise noted

Features

•r

• High performance trench technology for extremely low

• Low gate charge

• High power and current handling capability

= 43oC/W) 19 A

θJA

DS(ON)

r

DS(ON)

= 5.7mΩ, V = 6.8mΩ, V

G

= 10V, ID = 35A

GS

= 4.5V, ID = 35A

GS

D

S

93 A

tm

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-263 1.88 Thermal Resistance Junction to Ambient TO-263 ( Note 3) 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB8896 FDB8896 TO-263AB 330mm 24mm 800 units

o

C/W

o

C/W

o

C/W

FDB8896 Rev. B2

FDB8896

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Tes t Cond itions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 24V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V

I

= 35A, VGS = 10V - 0.0049 0.0057

D

= 35A, VGS = 4.5V - 0.0059 0.0068

I

Drain to Source On Resistance

D

I

= 35A, VGS = 10V,

D

= 175oC

T

J

- 0.0078 0.0094

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance Output Capacitance - 490 - pF Reverse Transfer Capacitance - 300 - pF

= 15V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance VGS = 0.5V, f = 1MHz - 2.3 - Ω Total Gate Charge at 10V VGS = 0V to 10V Total Gate Charge at 5V VGS = 0V to 5V - 25 36 nC

V

= 15V

Threshold Gate Charge VGS = 0V to 1V - 2.3 3.0 nC Gate to Source Gate Charge - 8 - nC Gate Charge Threshold to Plateau - 5.7 - nC

DD

= 35A

I

D

= 1.0mA

I

g

Gate to Drain “Miller” Charge - 9.5 - nC

- 2525 - pF

-4867nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 9 - ns Rise Time - 102 - ns Turn-Off Delay Time - 58 - ns Fall Time - 44 - n s Turn-Off Time - - 153 ns

(VGS = 10V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes: 1: Package current limitation is 80A. 2: Starting T 3: Pulse width = 100s. 4

Source to Drain Diode Voltage Reverse Recovery Time ISD = 35A, dISD/dt = 100A/µs- -27ns

Reverse Recovered Charge ISD = 35A, dISD/dt = 100A/µs- -12nC

= 25°C, L = 36µH, IAS = 64A, VDD = 27V, VGS = 10V.

J

- - 167 ns

= 15V, ID = 35A

V

DD

= 4.5V, RGS = 6.2Ω

V

GS

I

= 35A - - 1.25 V

SD

I

= 20A - - 1.0 V

SD

FDB8896

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULT IPL I ER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

Figure 1. Normali ze d Po we r Dis sip ation vs Case

Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

100

CURRENT LIMITED BY PACKAGE

80

VGS = 10V

60

VGS = 4.5V

40

, DRAIN CURRENT (A)

D

I

20

0

25 50 75 100 125 150

175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

P

DM

t

1

t

x R

θJC

+ T

2

C

1

10

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

0

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 4.5V

, PEAK CURRENT (A)

DM

I

100

50

-5

10

-4

10

-3

10

-2

10

-1

10

t, PUL SE WIDTH (s)

TC = 25oC FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

FDB8896

Typical Characteristics T

1000

100

10

OPERATION IN THIS

AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r

1

SINGLE PULSE TJ = MAX RATED

= 25oC

T

C

0.1 110

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

= 25°C unless otherwise noted

C

Figure 5. Forward Bias Safe Operating Area

160

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

120

TJ = 25oC

80

, DRAIN CURRENT (A)

D

I

40

TJ = 175oC

0

1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

10µs

100µs

1ms

10ms

DC

500

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

100

10

, AVALANCHE CURRENT (A)

AS

I

60

1

0.01 0.1 1 10 100

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Applica ti on Note s AN75 14 and AN75 15

Figure 6. Unclamped Inductive Switching

Capability

160

VGS = 10V

120

80

, DRAIN CURRENT (A)

D

I

40

0

4

0 0.25 0.5 0.75 1.0 1.25 1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4V

TC = 25oC

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VGS = 5V

VGS = 3V

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

14

ID = 35A

12

10

8

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

DS(ON)

r

6

ID = 1A

4

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

Figure 9. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

1.6

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 35A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature