Fairchild FDP8880, FDB8880 service manual

0

May 2008

FDP8880 / FDB8880

FDP8880 / FDB 8880 N-Channel PowerTrench

30V, 54A, 11.6mΩ Features



r

= 14.5mΩ, V

DS(ON)



r

= 11.6mΩ, V

DS(ON)



High pe rformance trench tech nology for e xtremely low r

DS(ON)



Low gat e ch arge



High power and current handling capability



RoHS Complicant

= 4.5V, ID = 40A

GS

= 10V, ID = 40A

GS

®

MOSFET

General Description

This N- Channe l MOSF ET has been desig ned sp ecif icall y to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM contro llers. It ha s be en optimize d for low gate cha r ge , low r

and fast switching speed.

DS(ON)

Application

 DC / DC Converters

tmM

DRAIN

(FLANGE)

GATE

SOURCE

TO-263AB

FDB SERIES

(FLANGE)

DRAIN

1

TO-220AB

FDP SERIES

DRAIN

GATE

SOURCE

D

G

S

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FDP8880 / FDB8880

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 30 V Gate to Source Voltage ±20 V Drain Cur re nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 25oC, VGS = 4.5V) 48 A

C

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 11 A

θJA

54 A

Pulsed Figure 4 A

E

AS

P

D

T

, T

J

STG

Single Pulse Avalanche Energy (Note 1) 31 mJ Power dissipation 55 W Derate above 25

o

C0.37W/

Operating and Storage Temperature -55 to 175

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-220,TO-263 2.73 Thermal Resistance Junction to Am bient TO-220,TO-262 ( Note 2) 62 Thermal Resistance Junction to Am bient TO-263, 1in2 copper pad ar ea 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP8880 FDP8880 TO-220AB Tube N/A 50 units FDB8880 FDB8880 TO-263AB 330mm 24mm 800 units F F

o

C/W

o

C/W

o

C/W

o

C

o

C

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Condit ions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 24V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Vo ltage VGS = VDS, ID = 250µA 1.2 - 2.5 V

I

= 40A, VGS = 10V - 0.0095 0.011 6

D

= 40A, VGS = 4.5V - 0.012 0.0145

I

Drain to S ou r c e On Re si st ance

D

I

= 40A, VGS = 10V,

D

T

= 175oC

J

- 0.015 0.019

µA

Ω

DP8880 / FDB8880 Rev. A

F

1

2

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Dynamic Characteristics

C C C R Q Q Q Q Q Q

ISS OSS RSS G

g(TOT) g(5) g(TH) gs gs2 gd

Input Capacitance Output Capacit ance - 255 - pF Reverse Transfer Capacitance - 147 - pF Gate Resistance VGS = 0.5V, f = 1MHz - 2.7 - Ω Total Gate Charge at 10V VGS = 0V to 10V Total Gate Charge at 5V VGS = 0V to 5V - 12 16 nC Threshold Gate Charge VGS = 0V to 1V - 1.6 2.1 nC Gate to Source Gate Charg e - 3.2 - nC Gate Charge Threshold to Plateau - 2.0 - nC Gate to Drain “Miller” Charge - 4.8 - nC

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

DD

I

= 40A

D

= 1.0m A

I

g

FDP8880 / FDB8880

- 1240 - pF

-2229nC

= 15V

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 8 - ns Rise Time - 107 - ns Turn-Off Delay Time - 47 - ns Fall Time - 51 - ns Turn-Off Time - - 147 ns

(VGS = 10V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 34uH, IAS = 43A,Vdd = 27V, Vgs = 10V. 2: Pulse width = 100s. 3

Source to Drain Diode Voltage Reverse Recovery Time ISD = 40A, dISD/dt = 100A/µs- -27ns

Reverse Recovered Charge ISD = 40A, dISD/dt = 100A/µs- -18nC

--171ns

= 15V, ID = 40A

V

DD

= 10V, RGS = 13.6Ω

V

GS

I

= 40A - - 1.25 V

SD

I

= 3.5A - - 1.0 V

SD

DP8880 / FDB8880 Rev. A

F

1

3

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FDP8880 / FDB8880

Typical Characteristics T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

TC, CASE TEMPERATURE (oC)

= 25°C unless otherwise noted

C

150

125

Figure 1. Normalized Power Dissipation vs Case

Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

60

40

20

, DRAIN CURRENT (A)

D

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Continuous Drain Curr ent vs

Case Temperature

P

DM

t

1

t

x R

2

+ T

θJC

C

1

10

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

0

Figure 3. Normalized Maximum Transient Thermal Impedance

600

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 4.5V

, PEAK CURRENT (A)

100

DM

I

50

-5

10

DP8880 / FDB8880 Rev. A

-4

10

1

VGS = 10V

-3

10

-2

10

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

4

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

I = I

-1

10

175 - T

25

150

0

10

C

1

10

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