Fairchild FDB86135 service manual

tm

FDB86135

D

G

S

D2-PAK FDB Series

G

S

D

N-Channel PowerTrench® MOSFET

100V, 176A, 3.5mΩ

FDB86135 N-Channel PowerTrench

June 2011

Features

•Max R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low R

DS(on)

• High Power and Current Handling Capability

• RoHS Compliant

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

E

AS

P

D

, T

T

J

STG

= 3.5mΩ at VGS = 10V, ID = 75A

DS(on)

o

= 25

C unless otherwise noted

C

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Curren - Continuous (Silicon Limited) TC = 25oC 176

- Continuous T

- Pulsed 704 A Single Pulsed Avalanche Energy (Note 3) 658 mJ

- T

= 25oC (Note 1a) 227 W

Power Dissipation Operating and Storage Temperature Range -55 to +175

C

= 25oC (Note 1b) 2.4 W/oC

- T

A

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications

• DC-DC primary bridge

• DC-DC Synchronous rectification

• Hot swap

= 25oC 120

C

= 25oC(Note 1a) 75

C

®

MOSFET

A - Continuous( Package Limited) T

o

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 0.66 Thermal Resistance, Junction to Ambient (Note 1a) 62.5

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB86135 FDB86135 D2-PAK 330mm 24mm 800

o

C/W

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FDB86135 N-Channel PowerTrench

NOTES:

1. R

θJA

is determined with the device mounte d on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 i n. boar d of FR-4 ma terial. R

θJC

is guaranteed by design while R

θCA

is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting TJ = 25 °C, L = 1 mH, IAS = 36.3 A, VDD = 100 V, VGS = 10 V.

40 °C/W when mounted on a 1 in

2

pad of 2 oz copper

a)

62.5 °C/W when mounted on a minimum pad of 2 oz copper

b)

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV ΔBV

ΔT I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 100 - - V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 80V, V Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC - 0.07 - V/oC

D

= 0V - - 1 μA

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.0 3.5 mΩ Forward Transconductance VDS = 10V, ID = 75A - 167 - S

Dynamic Characteristics

C C C Q Q Q Q

iss oss rss g(tot) gs gs2 gd

Input Capacitance Output Capacitance - 2430 3230 pF Reverse Transfer Capacitance - 210 - pF Total Gate Charge at 10V Gate to Source Gate Charge - 24 - nC Gate Charge Threshold to Plateau - 8 - nC Gate to Drain “Miller” Charge - 25 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time Turn-On Rise Time - 54 118 ns Turn-Off Delay Time - 37 84 ns Turn-Off Fall Time - 11 32 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

= 80V, ID = 75A

V

DS

V

= 10V

GS

VDD = 50V, ID = 75A V

= 10V, R

GS

GEN

= 4.7Ω

- 5485 7295 pF

- 89 116 nC

-2254ns

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Drain to Source Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge - 129 - nC

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs

F

= 75A (Note 2) - - 1.25 V

SD

= 75A, V

SD

= 80V

DD

-72-ns

FDB86135 Rev. C

2

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Typical Performance Characteristics

0.02 0.1 1 10

2

10

100

600

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

23456

1

10

100

300

-55oC

150oC

*Notes:

1. V

DS

= 10V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.2 0.4 0.6 0.8 1.0 1.2

1

10

100

500

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 60 120 180 240 300 360

0.0025

0.0030

0.0035

0.0040

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0306090

0

2

4

6

8

10

*Note: ID = 75A

VDS = 20V V

DS

= 50V

V

DS

= 80V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te C h arge [nC]

0.1

110

30

100

5000

10000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MH z

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDB86135 N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDB86135 Rev. C

3

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