Fairchild FDB86102LZ service manual

FDB86102LZ

D

G

S

TO-263AB

FDB Ser ies

S

G

D

N-Channel PowerTrench® MOSFET

100 V, 30 A, 24 mΩ
Features

 Max r
 Max r
 HBM ESD protection level > 6 kV typical (Note 4)
 Very low Qg and Qgd compared to competing trench

technologies

 Fast switching speed
 100% UIL Tested
 RoHS Compliant

= 24 mΩ at V

DS(on)

= 35 mΩ at V

DS(on)

= 10 V, ID = 8.3 A

GS

= 4.5 V, ID = 6.8 A

GS

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.

Applications

 DC-DC conversion
 Inverter
 Synchronous Rectifier

May 2011

®

process that has

FDB86102LZ N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous(Package limited) TC = 25 °C 30

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 121 mJ
Power Dissipation TA = 25 °C (Note 1a) 3.1
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 2

A

C = 25 °C 40

A = 25 °C (Note 1a) 8.3

A

W

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 1.9
Thermal Resistance, Junction to Ambient (Note 1a) 40

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB86102LZ FDB86102LZ TO-263AB 330mm 24 mm 800 units

©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1

1

www.fairchildsemi.com

FDB86102LZ N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 69 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±10 μA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.5 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 8.3 A 18 24

GS

= 4.5 V, ID = 6.8 A 23 35

GS

= 10 V, ID = 8.3 A,TJ = 125 °C 31 42

V

GS

Forward Transconductance VDS = 5 V, ID = 8.3 A 29 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 181 240 pF
Reverse Transfer Capacitance 9 13 pF

= 50 V, VGS = 0 V,

V

DS

f = 1MHz

Gate Resistance 0.4 Ω

959 1275 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 2.1 10 ns
Turn-Off Delay Time 18.2 33 ns

= 50 V, ID = 8.3 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 2.3 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 2.4 nC

= 0 V to 10 V

GS

= 0 V to 4.5 V 7.6 11 nC

GS

V

DD

I

= 8.3 A

D

= 50 V,

Gate to Drain “Miller” Charge 2.5 nC

6.6 13 ns

15.2 21 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS = 8.3 A (Note 2) 0.8 1.3

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1. 5 in. bo ard of FR-4 mater ial. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting TJ = 25 °C, L = 3 mH, IAS = 9 A, VDD = 100 V, VGS = 10 V.

4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 40 64 nC

a)

40 °C/W when mounted on a

2

1 in

pad of 2 oz copper

GS

= 0 V, IS = 2.4 A (Note 2) 0.7 1.2

V

GS

= 8.3 A, di/dt = 100 A/μs

I

F

2

42 67 ns

is guaranteed by design while R

θJC

62.5 °C/W when mounted on

b)

a minimum pad of 2 oz copper

V

is determined by

θCA

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