Fairchild FDB8453LZ service manual
tm
FDB8453LZ
N-Channel PowerTrench® MOSFET
40V, 50A, 7.0mΩ
Features
Max r
Max r
HBM ESD protection level of 7.6kV typical (note 4)
Fast Switching
RoHS Compliant
= 7.0mΩ at VGS = 10V, ID = 17.6A
DS(on)
= 9.0mΩ at VGS = 4.5V, ID = 14.9A
DS(on)
D
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
Inverter
Power Supplies
FDB8453LZ N-Channel PowerTrench
August 2007
®
process that has
®
MOSFET
D
G
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 50
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 253 mJ
Power Dissipation TC = 25°C 66
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
TO-263AB
FDB Series
= 25°C unless otherwise noted
C
G
S
= 25°C 74
C
= 25°C (Note 1a) 16.1
A
= 25°C (Note 1a) 3.1
A
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.88
Thermal Resistance, Junction to Ambient (Note 1a) 40
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDB8453LZ FDB8453LZ TO-263AB 330mm 24mm 800 units
©2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
1
www.fairchildsemi.com
FDB8453LZ N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 32V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 36 mV/°C
= 0V 1 µA
GS
= 0V ±10 µA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.8 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5V, ID = 17.6A 84 S
ID = 250µA, referenced to 25°C -6.0 mV/°C
VGS = 10V, ID = 17.6A 6.3 7.0
VGS = 4.5V, ID = 14.9A 7.3 9.0
VGS = 10V, ID = 17.6A,
TJ = 125°C
9.9 11
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 325 430 pF
Reverse Transfer Capacitance 200 295 pF
VDS = 20V, VGS = 0V,
f = 1MHz
2665 3545 pF
Gate Resistance f = 1MHz 2.2 Ω
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 6 13 ns
Turn-Off Delay Time 37 60 ns
VDD = 20V, ID = 17.6A,
VGS = 10V, R
GEN
= 6Ω
11 20 ns
Fall Time 5 11 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 7 nC
= 0V to 10V
GS
= 0V to 5V 25 35 nC
GS
VDD = 20V,
ID = 17.6A
47 66 nC
Gate to Drain “Miller” Charge 9 nC
Drain-Source Diode Characteristics
V
= 0V, IS = 2.6A (Note 2) 0.7 1.2
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
R
θJC
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 62.5°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T
4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 15 27 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
= 25°C, L = 3mH, IAS = 13A, VDD = 40V, VGS = 10V.
J
is determined by the user’s board design.
θJA
GS
V
= 0V, IS = 17.6A (Note 2) 0.8 1.3
GS
IF = 17.6A, di/dt = 100A/µs
24 38 ns
V
©2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
www.fairchildsemi.com2
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