Fairchild FDB8447L service manual

FDB8447L
40V N-Channel PowerTrench® MOSFET

40V, 50A, 8.5mΩ
Features

 Max r

 Max r

 Fast Switching

 RoHS Compliant

= 8.5mΩ at VGS = 10V, ID = 14A

DS(on)

= 11mΩ at VGS = 4.5V, ID = 11A

DS(on)

General Description

This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low
superior performance benefit in the application.

r

DS(on)

Application

 Inverter

 Power Supplies

and optimized BV

D

February 2007

®

technology to

capability to offer

DSS

FDB8447L 40V N-Channel PowerTrench

®

MOSFET

D

G

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C 50

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100

Drain-Source Avalanche Energy (Note 3) 153 mJ

Power Dissipation TC= 25°C 60

Power Dissipation (Note 1a) 3.1

Operating and Storage Junction Temperature Range –55 to +150 °C

TO-263AB

FDB Series

= 25°C unless otherwise noted

C

S

= 25°C (Note 1) 66

C

= 25°C (Note 1a) 15

A

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 2.1

Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB8447L FDB8447L TO-263AB 330mm 24mm 800 units

©2007 Fairchild Semiconductor Corporation
FDB8447L Rev.C

°C/W

1

www.fairchildsemi.com

FDB8447L 40V N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 32V, V

Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 35 mV/°C

= 0V 1 µA

GS

= 0V ±100 nA

GS

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.9 3 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = 5V, ID = 14A 58 S

ID = 250µA, referenced to 25°C -5 mV/°C

VGS = 10V, ID = 14A 7.4 8.5

VGS = 10V, ID = 14A, TJ=125°C 10.8 12.4

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 250 335 pF

Reverse Transfer Capacitance 150 225 pF

VDS = 20V, VGS = 0V,
f = 1MHz

1970 2620 pF

Gate Resistance f = 1MHz 1.0 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 6 12 ns

Turn-Off Delay Time 28 45 ns

VDD = 20V, ID = 14A
VGS = 10V, R

GEN

= 6Ω

11 20 ns

Fall Time 4 10 ns

Total Gate Charge, V

Total Gate Charge, V

Gate to Source Gate Charge 6 nC

= 10V

GS

= 5V 20 28 nC

GS

VDD =20V, ID = 14A
V

= 10V

GS

37 52 nC

Gate to Drain “Miller” Charge 7 nC

mΩVGS = 4.5V, ID = 11A 8.7 11. 0

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

θJA

R

θJC

a. 40°C/W when mounted on a 1 in

b. 62.5°C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T

FDB8447L Rev.C

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 24 36 nC

is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

is guaranteed by design while R

= 25°C, L = 1mH, IAS = 17.5A, VDD = 40V, V

J

is determined by the user’s board design.

θJA

2

pad of 2 oz copper

GS

= 10V.

= 0V, IS = 14A (Note 2) 0.8 1.2 V

GS

IF = 14A, di/dt = 100A/µs

2

28 42 ns

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