Fairchild FDB8444 service manual

FDB8444

N-Channel PowerTrench® MOSFET

40V, 70A, 5.5mΩ

FDB8444 N-Channel PowerTrench

February 2006

Features

 Typ r

 Typ Q

 Low Miller Charge

 Low Qrr Body Diode

 UIS Capability (Single Pulse and Repetitive Pulse)

 Qualified to AEC Q101

 RoHS Compliant

= 3.9mΩ at VGS = 10V, ID = 70A

DS(on)

g(TOT)

= 91nC at V

GS

= 10V

Applications

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Transmission

 Distributed Power Architecture and VRMs

 Primary Switch for 12V Systems

E

E

R

F

I

D

A

E

L

M

P

L

E

M

E

N

T

A

T

I

O

N

®

MOSFET

GATE

SOURCE

TO-263AB

FDB SERIES

©2006 Fairchild Semiconductor Corporation
FDB8444 Rev A2 (W)

D

G

DRAIN

(FLANGE)

S

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Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V

Gate to Source Voltage ± 20 V

Drain Current Continuous (V

= 10V) (Note 1) 70 A

GS

Pulsed Figure 4

Single Pulse Avalanche Energy (Note 2) 307 mJ

Power Dissipation 167 W

o

Derate above 25

C1.1W/oC

Operating and Storage Temperature -55 to +175

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 0.9

Thermal Resistance, Junction to Ambient TO-263, lin2 copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB8444 FDB8444 TO-263AB 330mm 24mm 800 units

o

C/W

o

C/W

FDB8444 N-Channel PowerTrench

o

C

®

MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

r

on)

DS(

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V

Zero Gate Voltage Drain Current

VDS = 32V
V

= 0V

GS

TJ =150°C - - 250

- - 1 µA

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 2 2.6 4 V

ID = 70A, VGS = 10V - 3.9 5.5

Drain to Source On Resistance

ID = 70A, VGS = 10V,
TJ = 175°C

- 7 9.9

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

g(TOT)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 480 640 pF

Reverse Transfer Capacitance - 290 435 pF

VDS = 25V, VGS = 0V,
f = 1MHz

- 6040 8035 pF

Gate Resistance f = 1MHz - 2 - Ω

Total Gate Charge at 10V VGS = 0 to 10V

Threshold Gate Charge VGS = 0 to 2V - 7 10 nC

Gate to Source Gate Charge

Gate Charge Threshold to Plateau - 17 - nC

VDD = 20V,

ID = 70A,

- 91 128 nC

- 23 - nC

Gate to Drain “Miller” Charge - 20 - nC

mΩ

FDB8444 Rev A2 (W)

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Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

(on)

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

- - 135 ns

Turn-On Delay Time - 12 - ns

Turn-On Rise Time - 78 - ns

Turn-Off Delay Time - 48 - ns

= 20V, ID = 70A

V

DD

= 10V, RGS = 2Ω

V

GS

Turn-Off Fall Time - 15 - ns

Turn-Off Time - - 95 ns

Drain-Source Diode Characteristics

I

= 70A - - 1.25 V

V

SD

t

rr

Q

rr

Notes:
1: Maximum wire current carrying capacity is 70A.
2: Starting T

Source to Drain Diode Voltage

Reverse Recovery Time IF = 70A, di/dt = 100A/µs--62ns

Reverse Recovery Charge IF = 70A, di/dt = 100A/µs--82nC

= 25oC, L = 0.2mH, IAS = 56A.

J

SD

= 35A - - 1.0 V

I

SD

FDB8444 N-Channel PowerTrench

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDB8444 Rev A2 (W)

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

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