Fairchild FDB8443 service manual

tm

FDB8443

N-Channel PowerTrench® MOSFET

40V, 182A, 3.0mΩ

Features

 Typ r

 Typ Q

 Low Miller Charge

 Low Qrr Body Diode

 UIS Capability (Single Pulse and Repetitive Pulse)

 RoHS Compliant

= 2.3mΩ at V

DS(on)

= 142nC at VGS = 10V

g(10)

E

R

F

I

D

A

E

L

M

P

L

E

M

T

I

O

N

= 10V, ID = 80A

GS

E

N

T

A

June 2011

Applications

 Power Tools

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Steering

 Integrated Starter / Alternator

 Distributed Power Architecture and VRMs

 Primary Switch for 12V Systems

FDB8443 N-Channel PowerTrench

®

MOSFET

www.fairchildsemi.com1

FDB8443 N-Channel PowerTrench

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

I

DM

E

AS

P

D

T

J

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

= 25oC, Silicon Limited) 182*

C

= 100oC, Silicon Limited) 129*

C

= 25oC, Package Limited) 120

C

= 25oC, R

A

= 43oC/W) 25

θJA

Drain Current

- Continuous (T

D ra i n C u rr e n t - P u ls e d S ee Fi g u re 4

Single Pulse Avalanche Energy (Note 1) 531 mJ

Power Dissipation 188 W

o

Derate above 25

, T

Operating and Storage Temperature -55 to +175

STG

C1.25W/

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case 0.8

Thermal Resistance Junction to Ambient (Note 2) 62

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

o

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB8443 FDB8443 TO-263AB 330mm 24mm 800 units

A

o

C

C/W

C

®

MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V

V

= 32V, - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(th)

r

DS(on)

Gate to Source Threshold Voltage VGS = VDS, ID = 250μA22.84V

= 80A, VGS= 10V - 2.3 3.0

I

Drain to Source On Resistance

D

I

= 80A, VGS= 10V,

D

T

= 175oC

J

-4.25.5

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

g(TOT)

g(TH)

gs

gs2

gd

Input Capacitance

Output Capacitance - 800 - pF

Reverse Transfer Capacitance - 510 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance VGS = 0.5V, f = 1MHz - 0.9 - Ω

Total Gate Charge at 10V VGS = 0 to 10V

Threshold Gate Charge VGS = 0 to 2V - 17.5 23 nC

Gate to Source Gate Charge

Gate Charge Threshold to Plateau - 18.8 - nC

V

= 20V

DD

I

= 35A

D

I

= 1mA

g

Gate to Drain “Miller“ Charge - 32 - nC

- 9310 - pF

- 142 185 nC

-36-nC

μA

mΩ

FDB8443 Rev. A2 www.fairchildsemi.com2

FDB8443 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics (V

t

on

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

Turn-On Delay Time - 18.4 - ns

Rise Time - 17.9 - ns

Turn-Off Delay Tim e - 55 - ns

Fall Time - 13.5 - ns

Turn-Off Time - - 109 ns

= 10V)

GS

= 20V, ID = 35A

V

DD

V

= 10V, RGS = 2Ω

GS

- - 58 ns

Drain-Source Diode Characteristics

I

= 35A - 0.8 1.25

V

SD

t

rr

Q

rr

Notes:

1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A. 2: Pulse width = 100s.

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovery Charge - 48 62 nC

SD

= 15A - 0.8 1.0

I

SD

= 35A, dISD/dt = 100A/μs

I

SD

-4255ns

V

®

MOSFET

FDB8443 Rev. A2 www.fairchildsemi.com3