Fairchild FDP7045L, FDB7045L service manual

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FDP7045L/FDB7045L

N-Channel Logic Level PowerTrench

®

MOSFET

FDP7045L/FDB7045L

January 2000

General Description

This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.

These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings

DS(on)

G

TC = 25°C unless otherwise noted

Features

 100 A, 30 V. R

 Critical DC electrical parameters specified at elevated
temperature.

 Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.

 High performance PowerTrench technology for
extremely low R

 175°C maximum junction temperature rating.

= 0.0045 W @ VGS = 10 V

DS(ON)

= 0.006 W @ VGS = 4.5 V.

R

DS(ON)

.

DS(ON)

D

G

S

TO-263AB

FDB Series

D

S

Symbol Parameter

V

DSS

V

GSS

I

D

D

TJ, T

STG

Drain-Source Voltage 30 V
Gate-Source Voltage
Maximum Drain Current - Continuous (Not e 1) 100

- Pulsed (Note 1) 300
Total Power Dissipation @ TC = 25°C 125 WP
Derate above 25°C0.85W/
Operating and Storage Junction Temperature Range -65 to +175

Thermal Characteristics

R

JC

θ

R

JA

θ

Thermal Resistance, Junction-to-Case 1.2
Thermal Resistance, Junction-to-Ambient 62.5

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDB7045L FDB7045L 13’’ 24mm 800
FDP7045L FDP7045L Tube N/A 45

ã1999 Fairchild Semiconductor Corporation

FDP7045L FDB7045L

20 V

±

75

FDP7045L/FDB7045L Rev.C

Units

A

C

°

C

°

C/W

°

C/W

°

FDP7045L/FDB7045L

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

DSS

BV

∆

T

J

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

J

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown

VGS = 0 V, ID = 250 µA30 V
Voltage
Breakdown Voltage Temperature

ID = 250 µA, Referenced to 25°C22 mV/
Coefficient

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate-Body Leakage Current,

VGS = 20 V, VDS = 0 V 100 nA

A

µ

Forward
Gate-Body Leakage Current,

VGS = -20 V, VDS = 0 V -100 nA
Reverse

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250 µA11.53V
Gate Threshold Voltage

ID = -250 µA, Referenced to 25°C-5 mV/
Temperature Coefficient

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 50 A,

= 10 V, ID = 50 A, TJ=125°C

V

GS

= 4.5 V,ID = 40 A

V

GS

0.0039

0.0056

0.0048

0.0045

0.0070

0.0060

Ω

On-State Drain Current VGS = 10 V, VDS = 10 V 50 A
Forward Transconductance VDS = 5 V, ID = 50 A 120 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 5400 pF
Output Capacitance 1170 pF
Reverse Transfer Capacitance

V

= 15 V, VGS = 0 V,

DS

f = 1.0 MHz

530 pF

C

°

C

°

(Note 2)

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time 14 30 ns
Turn-On Rise Time 114 160 ns
Turn-Off Delay Time 105 150 ns
Turn-Off Fall Time
Total Gate Charge 50 70 nC
Gate-Source Charge 16 nC
Gate-Drain Charge

V

= 15 V, ID = 50 A,

DD

= 10 V

V

GS

115 160 ns

V

= 15 V,

DS

= 50 A, VGS = 5 V

I

D

16 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward

V = 0 V, I = 50 A
Voltage

Notes:

1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.

2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%

(Note 2)

(Note 2)

75 A

0.95 1.2 V

FDP7045L/FDB7045L Rev.C

Typical Characteristics

FDP7045L/FDB7045L

80

VGS = 10V

3.5V

4.5V

60

40

20

, DRAIN-SOURCE CURRENT (A)

D

I

0

00.511.52

3.0V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

2.5V

2.2

2

1.8
VGS = 3.0V

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8

0 20406080

3.5V

4.0V

4.5V

I

, DRAIN CURRENT (A)

D

5.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

1.8
ID = 50A

= 10V

V

GS

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

0.014

0.012

0.01

0.008

0.006

, ON-RESISTANCE (OHM)

0.004

DS(ON)

R

0.002

0

246810

, GATE TO SOURCE V O LTAGE (V)

V

GS

6.0V

TA = 125oC

TA = 25oC

7.0V
10V

ID = 38A

Figure 3. On-Resistance Variation

with Temperature.

60

VDS = 5V

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

11.522.533.54

TA = 125oC

25oC

-55oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE ( V )

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDP7045L/FDB7045L Rev.C