Fairchild FDP6676S, FDB6676S service manual
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October 2001
FDP6676S
FDP6676S / FDB6676S
30V N-Channel PowerTrench
General Description
This MOSFET is designed to repl ace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion effic iency, providing a low
and low gate charge. The FDP/B6676S
R
DS(ON)
includes an integrated Schot tky diode using Fairchild’s
monolithic SyncFET t echnology. The performance of
the FDP/B6676S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
G
D
S
TO-220
FDP Series
SyncFET™
G
S
Features
• 38 A, 30 V. R
R
• Includes SyncFET Schot tky body diode
• Low gate charge (40nC typical)
• High performance trench te chnology for extremely
low R
• High power and current handling capability
•
and fast switching
DS(ON)
D
= 6.5 mΩ @ VGS = 10 V
DS(ON)
= 8.0 mΩ @ VGS = 4.5 V
DS(ON)
G
D
TO-263AB
FDB Series
S
FDB6676S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1)
– Pulsed (Note 1)
PD
TJ, T
STG
TL Maximum lead temperature for soldering purposes,
Total Power Dissipation @ T
Derate above 25°C
Operating and Storage Junction Temperature Range –55 to +150
1/8” from case for 5 s econds
= 25°C
C
±16
76
150
70
0.56
275
W/°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.8
55
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB6676S FDB6676S 13’’ 24mm 800
FDP6676S FDP6676S Tube n/a 45
2001 Fairchild Semiconductor Corporation
FDP6676S/FDB6676S Rev . C (W)
V
A
W
°C
°C
/
FDP6676S
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 25 V, ID=12A 310 mJ
DSS
IAR Drain-Source Avalanche Current 12 A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
= 1 mA, Referenced to 25°C
I
D
25
mV/°C
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1. 3 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= 1 mA, Referenced to 25°C
I
D
VGS = 10 V, ID = 38 A
= 4.5 V, ID = 35 A
V
GS
=10 V, ID =38A, TJ=125°C
V
GS
–8.4
4.7
6.5
5.2
8.0
7.3
11
mV/°C
mΩ
On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
gFS Forward Transconductance VDS = 10 V, ID = 38 A 145 S
Dynamic Characteristics
C
Input Capacitance 4853 pF
iss
C
Output Capacitance 850 pF
oss
C
Reverse Transfer Capacitance
rss
= 15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
316 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 14 25 ns
d(on)
tr Turn–On Rise Time 11 20 ns
t
Turn–Off Delay Time 89 142 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 40 56 nC
Qgs Gate–Source Charge 10 nC
Qgd Gate–Drain Charge
= 15 V, ID = 1 A,
V
DS
= 10 V, R
V
GS
= 15 V, ID = 38 A,
V
DS
V
= 5 V
GS
GEN
= 6 Ω
31 50 ns
11 nC
FDB6676S
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 28.5 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
VGS = 0 V, IS = 3.5 A (Note 1)
VGS = 0 V, IS = 7 A (Note 1)
= 3.5 A,
I
F
= 300 A/µs (Note 2)
d
iF/dt
0.4
57 nC
0.7 V
0.5
FDP6676S/FDB6676S Rev C ( W)
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