Fairchild FDP6676, FDB6676 service manual
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FDP6676/FDB6676
30V N-Channel Logic Level PowerTrench
FDP6676/FDB6676
April 2001
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers. It has been optimized for
“low side” synchronous rectifier operat ion, providing an
extremely low R
DS(ON)
.
Applications
• Synchronous rectifier
• DC/DC converter
.
G
G
D
S
TO-220
FDP Series
Absolute Maximum Ratings T
S
o
=25
C unless otherwise noted
A
Features
• 42 A, 30 V. R
R
• Critical DC electric al parameters specified at
elevated temperature
• High performance trench te chnology for extremely
low R
• 175°C maximum junct i on temperature rating
DS(ON)
D
= 6.0 mΩ @ VGS = 10 V
DS(ON)
= 7.5 mΩ @ VGS = 4.5 V
DS(ON)
G
D
TO-263AB
FDB Series
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1) 84 A
– Pulsed (Note 1) 240
PD
TJ, T
STG
Total Power Dissipation @ T
Derate above 25°C
Operating and Storage Junction Temperature Range -65 to +175
= 25°C
C
± 16
93 W
0.48
V
W°C
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.6
62.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDP6676 FDP6676 Tube n/a 45
FDB6676 FDB6676 13” 24mm 800 units
2000 Fairchild Semiconductor Corporation
FDP6676/FDB6676 Rev C(W)
°C/W
°C/W
FDP6676/FDB6676
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W
IAR
DSS
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
= 15 V, ID = 20 A
V
DD
370 mJ
20 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
30 V
24
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 60 A
D(on)
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 42 A
= 4.5 V, ID = 39 A
V
GS
=10V, ID = 42 A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 42 A 141 S
1 1.5 3 V
–4.5
4.3
4.9
7.0
6
7.5
11
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 5324 pF
iss
C
Output Capacitance 841 pF
oss
C
Reverse Transfer Capacitance
rss
= 15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
384 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 15 27 ns
d(on)
tr Turn–On Rise Time 10 20 ns
t
Turn–Off Delay Time 93 149 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 43 60 nC
Qgs Gate–Source Charge 13 nC
Qgd Gate–Drain Charge
= 15 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
= 15 V, ID = 42 A,
V
DS
V
= 5 V
GS
GEN
= 6 Ω
37 59 ns
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Cont i nuous Drain–Source Diode Forward Current 84 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
VGS = 0 V, IS = 42 A 0.9 1.3 V
FDP6676/FDB6676 Rev. C( W)
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