Fairchild FDP6670S, FDB6670S service manual
FDP Series
TO-263AB
FDB Series
FDP
6670S
/FDB
6670S
查询FDB6670S供应商查询FDB6670S供应商
September 2001
FDP6670S/FDB6670S
30V N-Channel PowerTrench SyncFET™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDP6670S includes
DS(ON)
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670S/FDB6670S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
G
G
D
S
TO-220
Absolute Maximum Ratings T
S
o
=25
A
C unless otherwise noted
Features
• 31 A, 30 V. R
R
• Includes SyncFET Schottky body diode
• Low gate charge (23nC typical)
• High performance trench technology for extremely
low R
• High power and current handling capability
and fast switching
DS(ON)
D
= 8.5 mΩ @ VGS = 10 V
DS(ON)
= 12.5 mΩ @ VGS = 4.5 V
DS(ON)
D
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1)
– Pulsed (Note 1)
PD
TJ, T
STG
TL Maximum lead temperature for soldering purposes,
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range –55 to +150
1/8” from case for 5 seconds
±20
62
150
62.5
0.5
275
W
W/°C
°C
°C
V
A
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 2.1
Thermal Resistance, Junction-to-Ambient 62.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB6670S FDB6670S 13’’ 24mm 800 units
FDP6670S FDP6670S Tube n/a 45
2001 Fairchild Semiconductor Corporation
FDP6670S/FDB6670S Rev E(W)
°C/W
°C/W
FDP
6670S
/FDB
6670S
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W
Single Pulse Drain-Source
DSS
Avalanche Energy
IAR Maximum Drain-Source Avalanche
Current
VDD = 25 V, ID = 16.5 A
285 mJ
16.5 A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 1mA 30 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
DSS
I
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = 26mA, Referenced to 25°C 24 mV/°C
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 1mA 1 2.2 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
D(on)
gFS Forward Transconductance VDS = 10 V, ID = 31 A 69 S
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 26mA, Referenced to 25°C
VGS = 10 V, ID = 31 A
VGS = 4.5 V, ID = 26.5 A
VGS=10 V, ID =31 A, TJ=125°C
–4.5
5
8
10
mV/°C
8.5
12.5
19
mΩ
Dynamic Characteristics
C
Input Capacitance 2639 pF
iss
C
Output Capacitance 737 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
222 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 13 24 ns
d(on)
tr Turn–On Rise Time 10 21 ns
t
Turn–Off Delay Time 39 62 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 23 32 nC
Qgs Gate–Source Charge 9 nC
Qgd Gate–Drain Charge
VDS = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 31 A,
VGS = 5 V
35 56 ns
8 nC
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 32 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
VGS = 0 V, IS = 3.5 A (Note 1)
VGS = 0 V, IS = 7 A (Note 1)
IF = 3.5 A,
diF/dt = 300 A/µs (Note 2)
0.39
0.48
56
0.7
0.9
nC
V
FDP6670S/FDB6670S Rev E (W)
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