Fairchild FDP6670AS, FDB6670AS service manual
查询FDB6670AS供应商查询FDB6670AS供应商
January 2005
FDP6670AS/FDB6670AS
30V N-Channel PowerTrench® SyncFET™
FDP6670AS/FDB6670AS
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
and low gate charge. The FDP6670AS
R
DS(ON)
Features
• 31 A, 30 V. R
R
• Includes SyncFET Schottky body diode
= 8.5 mΩ @ VGS = 10 V
DS(ON)
= 10.5 mΩ @ VGS = 4.5 V
DS(ON)
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
• Low gate charge (28nC typical)
the FDP6670AS/FDB6670AS as the low-side switch in
a synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
G
G
D
S
TO-220
FDP Series
Absolute Maximum Ratings T
S
o
=25
C unless otherwise noted
A
• High performance trench technology for extremely
low R
and fast switching
DS(ON)
• High power and current handling capability
D
G
D
TO-263AB
FDB Series
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed (Note 1)
PD
TJ, T
STG
Total Power Dissipation @ T
Derate above 25°C
Operating and Storage Junction Temperature Range –55 to +150
= 25°C
C
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
±20
62
150
62.5
0.5
275
W/°C
V
A
W
°C
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.1
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB6670AS FDB6670AS 13’’ 24mm 800 units
FDB6670AS FDB6670AS_NL (Note 3) 13’’ 24mm 800 units
FDP6670AS FDP6670AS Tube n/a 45
FDP6670AS FDP6670AS_NL (Note 4) Tube n/a 45
©2005 Fairchild Semiconductor Corporation
FDP6670AS/FDB6670AS Rev A(X)
A
FDP6670
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 1mA 30 V
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
DSS
I
Gate–Body Leakage
GSS
Breakdown Voltage Temperature
Coefficient
J
= 26mA, Referenced to 25°C
I
D
= ±20 V, VDS = 0 V
V
GS
30
±100
mV/°C
nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 1mA 1 1.7 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
= 26mA, Referenced to 25°C
D
VGS = 10 V, ID = 31 A
= 4.5 V, ID = 26.5 A
V
GS
V
=10 V, ID =31 A, TJ=125°C
GS
On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
–3.4
6.8
8.4
9
8.5
10.5
mV/°C
mΩ
12.5
gFS Forward Transconductance VDS = 10 V, ID = 31 A 84 S
Dynamic Characteristics
C
Input Capacitance 1570 pF
iss
C
Output Capacitance 440 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.9
V
= 15 V, V
DS
f = 1.0 MHz
= 0 V,
GS
160 pF
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time 9 18 ns
d(on)
tr Turn–On Rise Time 12 22 ns
t
Turn–Off Dela y Time 27 43 ns
d(off)
tf Turn–Off Fall Time
t
Turn–On Delay Time 16 29 ns
d(on)
tr Turn–On Rise Time 16 29 ns
t
Turn–Off Dela y Time 25 40 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge, Vgs=10V 28 39 nC
Qgs Gate–Source Charge, Vgs=5V 15 21 nC
Qgd Gate–Drain Charge 5 nC
Qgd Gate–Drain Charge
V
= 15 V, ID = 1 A,
DS
= 10 V, R
V
GS
V
= 15 V, ID = 1 A,
DS
= 4.5 V, R
V
GS
V
= 15 V, ID = 31 A,
DS
GEN
GEN
= 6 Ω
19 34 ns
= 6 Ω
13 23 ns
5 nC
S/FDB6670AS
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 20 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
3. FDB6670AS_NL is a lead free product. The FDB6670AS_NL marking will appear on the reel label.
4. FDP6670AS_NL is a lead free product. The FDP6670AS_NL marking will appear on the reel label.
VGS = 0 V, IS = 3.5 A (Note 1)
VGS = 0 V, IS = 7 A (Note 1)
= 3.5 A,
I
F
= 300 A/µs (Note 2)
d
iF/dt
0.5
14 nC
0.7
0.6
0.9
FDP6670AS/FDB6670AS Rev A (X)
V
Loading...