Fairchild FDP6644, FDB6644 service manual

FDP6644/FDB6644

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FDP6644/FDB6644

30V N-Channel PowerTrench MOSFET

June 2001

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS

specifications.

(ON)

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

G

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings T

S

=25oC unless otherwise noted

A

Features

• 50 A, 30 V. R

• Low gate charge (27 nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• 175°C maximum junction temperature rating

D

= 8.5 mΩ @ VGS = 10 V

DS(ON)

R

= 10.5 mΩ @ VGS = 4.5 V

DS(ON)

G

D

TO-263AB

FDB Series

S

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1) 50 A

– Pulsed (Note 1) 150 A

Total Power Dissipation @ TC = 25°C 83 W

Derate above 25°C 0.55 W/°C

Operating and Storage Junction Temperature Range -65 to +175 °C

± 16

V

Thermal Characteristics

R

θJC Thermal Resistance, Junction-to-Case 1.8 °C/W

R

θJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB6644 FDB6644 13’’ 24mm 800 units
FDP6644 FDP6644 Tube n/a 45

2001 Fairchild Semiconductor Corporation

FDP6644 Rev C(W)

Electrical Characteristics T

FDP6644/FDB6644

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source
Avalanche Energy

Maximum Drain-Source Avalanche
Current

VDD = 15 V, ID = 25 A

240

25 A

mJ

Off Characteristics

BV

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temperature

Coefficient

J

ID = 250 µA, Referenced to 25°C 26 mV/°C

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 NA
Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 NA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = 25A
VGS = 4.5 V, ID = 25 A
VGS= 10 V, ID = 25 A, TJ=125°C

1 1.5 3 V

–5 mV/°C

6.4

7.3

9.3

On–State Drain Current VGS = 10 V, VDS = 5 V 60 A
Forward Transconductance VDS = 5 V, ID = 25 A 98 S

8.5

10.5
15

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 3068 pF
Output Capacitance 513 pF
Reverse Transfer Capacitance

VDS = 15 V, V
f = 1.0 MHz

GS

= 0 V,

196 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 12.5 22.5 ns
Turn–On Rise Time 8 16 ns

VDD = 15 V, ID = 1 A,
VGS = 10 V, R

GEN

= 6 Ω

Turn–Off Delay Time 54 86 ns
Turn–Off Fall Time
Total Gate Charge 27 38 nC
Gate–Source Charge 9 nC

VDS = 15 V, ID = 25 A,
VGS = 4.5 V

Gate–Drain Charge

14 26 ns

7 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Maximum Continuous Drain–Source Diode Forward Current 50 A
Drain–Source Diode Forward

Voltage

VGS = 0 V, IS = 25 A (Note 2) 0.8 1.3 V

FDP6644 Rev C(W)