Fairchild FDP603AL, FDB603AL service manual
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April 1998
FDP603AL / FDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage applications such as DC/DC converters and high
efficiency switching circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
33 A, 30 V. R
R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
175°C maximum junction temperature rating.
_________________________________________________________________________________
= 0.022 Ω @ VGS=10 V
DS(ON)
= 0.036 Ω @ VGS=4.5 V.
DS(ON)
.
DS(ON)
D
G
S
Absolute Maximum Ratings T
Symbol Parameter FDP603AL FDB603AL Units
V
DSS
V
GSS
I
D
P
D
TJ,T
T
L
THERMAL CHARACTERISTICS
R
JC
θ
R
JA
θ
Drain-Source Voltage 30 V
Gate-Source Voltage - Continuous ±20 V
Drain Current - Continuous 33 A
- Pulsed (Note 1) 100
Total Power Dissipation @ TC = 25°C
Derate above 25°C 0.33 W/°C
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case 3 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
= 25°C unless otherwise noted
C
50 W
275 °C
© 1998 Fairchild Semiconductor Corporation
FDP603AL Rev.D
Electrical Characteristics T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 12 A 100 mJ
Maximum Drain-Source Avalanche Current 12 A
OFF CHARACTERISTICS
BV
∆BV
I
DSS
I
GSSF
I
GSSR
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, V
GS
= 0 V
32
10 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
mV/oC
-100 nA
ON CHARACTERISTICS (Note 1)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.8 3 V
Gate Threshold Voltage Temp.Coefficient
/∆T
J
Static Drain-Source On-Resistance
ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 25 A
TJ =125 °C
-4.5
0.018 0.022
0.026 0.035
mV/oC
Ω
VGS = 4.5 V, ID = 10 A 0.03 0.036
I
I
g
D(on)
D(on)
FS
On-State Drain Current
VGS = 10 V, VDS = 10 V
On-State Drain Current VGS = 4.5 V, VDS = 10 V 15 A
Forward Transconductance
VDS = 10 V, ID = 25 A
60 A
24 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 345 pF
f = 1.0 MHz
Reverse Transfer Capacitance 95 pF
670 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
Turn - On Delay Time
Turn - On Rise Time
VDD = 15 V, ID = 25 A
VGS = 10 V, R
GEN
= 24 Ω
Turn - Off Delay Time 20 36 nS
Turn - Off Fall Time 80 115 nS
g
gs
gd
Total Gate Charge V
Gate-Source Charge 3.5 nC
Gate-Drain Charge 5.5 nC
= 10 V
DS
ID = 25 A, V
GS
= 10 V
8 16 nS
102 140 nS
19 26 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
V
SD
Note
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Maximum Continuos Drain-Source Diode Forward Current 25 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 1) 1 1.3 V
TJ = 125°C
0.85 1.1
FDP603AL Rev.D
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