Fairchild FDP6030L, FDB6030L service manual
FDP6030L/FDB6030L
FDP6030L/FDB6030L
N-Channel Logic Level PowerTrench MOSFET
August 2003
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
The result is a MOSFET that is easy and safer to drive
Features
• 48 A, 30 V R
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low R
DS(ON)
= 13 mΩ @ VGS = 10 V
DS(ON)
R
= 17 mΩ @ VGS = 4.5 V
DS(ON)
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
DS(ON)
• 175°C maximum junction temperature rating
and fast switching speed.
D
S
G
G
D
S
TO-220
FDP Series
Absolute Maximum Ratings T
D
S
=25oC unless otherwise noted
A
TO-263AB
FDB Series
G
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
± 20
Drain Current – Continuous (Note 1) 48 A
– Pulsed 150
Total Power Dissipation @ TC = 25°C
Derate above 25°C
52 W
0.3
W/°C
Operating and Storage Junction Temperature Range –65 to +175
V
°C
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDB6030L FDB6030L 13’’ 24mm 800 units
FDP6030L FDP6030L Tube n/a 45
2003 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case 2.9
Thermal Resistance, Junction-to-Ambient 62.5
°C/W
FDP6030L/FDB6030L Rev E(W)
Electrical Characteristics T
FDP6030L/FDB6030L
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
E
AS
I
AS
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. Calculated continuous current based on maximum allowable junction temperature.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
= 25°C unless otherwise noted
A
Single Pulse Drain-Source
VDD = 15 V, ID = 26 A 100 mJ
Avalanche Energy
Maximum Drain-Source Avalanche
26 A
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
VGS = ± 20 V, VDS = 0 V ± 100
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
Temperature Coefficient
Static Drain–Source On–
Resistance
VGS = 10 V, ID = 26 A
VGS = 4.5 V, ID = 21 A
VGS= 10 V, ID = 26 A, TJ=125°C
30 V
23
mV/°C
1 1.9 3 V
13
17
20
mV/°C
mΩ
–5
7.9
10.2
13.0
µA
nA
On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
Forward Transconductance VDS = 10V, ID = 26 A 68 S
Input Capacitance 1250 pF
Output Capacitance 330 pF
Reverse Transfer Capacitance
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3
Turn–On Delay Time 11 20 ns
Turn–On Rise Time 12 22 ns
VDS = 15 V, V
GS
= 0 V,
f = 1.0 MHz
VDD = 15V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
155 pF
Ω
Turn–Off Delay Time 29 46 ns
Turn–Off Fall Time
Total Gate Charge 13 18 nC
Gate–Source Charge 3.9 nC
VDS = 15 V, ID = 26 A,
VGS = 5 V
Gate–Drain Charge
12 21 ns
5.2 nC
Maximum Continuous Drain–Source Diode Forward Current 48 A
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 26 nS
Diode Reverse Recovery Charge
VGS = 0 V, IS = 26 A (Note 1) 0.92 1.3 V
IF = 26 A,
diF/dt = 100 A/µs
15 nC
FDP6030L/FDB6030L Rev E(W)
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