Fairchild FDP6030BL, FDB6030BL service manual
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FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench
MOSFET
FDP6030BL/FDB6030BL
July 2000
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
G
D
S
TO-220
FDP Series
Absolute Maximum Ratings
DS(on)
G
TC = 25°C unless otherwise noted
Features
• 40 A, 30 V. R
• Critical DC electrical parameters specified at elevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for
extremely low R
• 175°C maximum junction temperature rating.
= 0.018 Ω @ VGS = 10 V
DS(ON)
R
= 0.024 Ω @ VGS = 4.5 V.
DS(ON)
.
DS(ON)
D
D
G
S
TO-263AB
FDB Seri es
S
Symbol Parameter
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Maximum Drain Current - Continuous
- Pulsed 120
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range -65 to +175
(Note 1)
FDP6030BL FDB6030BL
±
20
40
60 W
0.36
Thermal Characteristics
θ
R
JC
θ
R
JA
Thermal Resistance, Junction-to- Case 2.5
Thermal Resistance, Junction-to- Ambient 62.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDB6030BL FDB6030BL 13’’ 24mm 800
FDP6030BL FDP6030BL Tube N/A 45
200 Fairchild Semiconductor International
Units
V
A
W/°C
°
C
°
C/W
°
C/W
FDP6030BL/FDB6030BL Rev.C
FDP6030BL/FDB6030BL
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalnche Current
(Note 1)
VDD = 15 V, ID = 40 A 150 mJ
40 A
Off Characteristics
BV
∆
∆
I
DSS
I
GSSF
BV
DSS
T
DSS
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate-Body Leakage Current,
Forward
I
GSSR
Gate-Body Leakage Current,
Reverse
On Characteristics
V
∆
∆
R
I
D(on)
g
GS(th)
GS(th)
V
T
DS(on)
FS
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current VGS = 10 V, VDS = 10 V 40 A
Forward Transconductance VDS = 5 V, ID = 20 A 30 S
(Note 1)
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
VGS = 20 V, VDS = 0 V 100 nA
VGS = -20 V, VDS = 0 V -100 nA
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 20 A,
= 10 V, ID = 20 A, TJ = 125°C
V
GS
V
= 4.5 V,ID = 17 A
GS
30 V
23
mV/°C
µ
A
11.6 3 V
-4.5
0.015
0.021
0.019
0.018
0.030
0.024
mV/°C
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1160 pF
Output Capacitance 250 pF
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 9 17 ns
Turn-On Rise Time 11 20 ns
Turn-Off Delay Time 23 37 ns
Turn-Off Fall Time
Total Gate Charge 12 17 nC
Gate-Source Charge 3.2 nC
Gate-Drain Charge
(Note 1)
V
= 15 V, VGS = 0 V,
DS
f = 1.0 MHz
V
= 15 V, ID = 1 A,
DD
= 10 V, R
V
GS
V
= 15 V,
DS
I
= 20 A, VGS = 5 V
D
GEN
= 6
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Note:
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
VGS = 0 V, IS = 20 A
(Note 1)
Voltage
(Note 1)
100 pF
816ns
3.7 nC
40 A
0.95 1.2 V
FDP6030BL/FDB6030BL Rev.C
T ypical Characteristics
(
)
)
FDP6030BL/FDB6030BL
80
VGS = 10V
70
60
50
40
30
20
, DRAIN-SOURCE CURRENT (A)
10
D
I
0
012345
6.0V
5.0V
4.5V
4.0V
3.5V
V
, DRAIN-SOURCE VOLTAGE (V)
DS
3.0V
2.6
2.4
2.2
VGS = 3.0V
2
1.8
1.6
, NORMALIZED
1.4
DS(ON)
R
1.2
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 1020304050
3.5V
4.0V
4.5V
ID, DRAIN CURRENT (A)
5.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation
with Drain Current and Gate V oltage.
1.8
ID = 20A
1.6
= 10V
V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE
o
C
0.06
0.05
0.04
0.03
0.02
, ON-RESISTANCE (OHM)
DS(ON)
0.01
R
0
246810
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = 125oC
TA = 25oC
ID = 10 A
Figure 3. On-Resistance Variation
with Temperature.
50
VDS = 5V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
12345
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = -55oC
25oC
125oC
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
Figure 6. Body Diode Forward V oltage
Variation with Source Current
and Temperature.
FDP6030BL/FDB6030BL Rev.C
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