Fairchild FDB5800 service manual

September 2005

FDB5800
N-Channel Logic Level PowerTrench® MOSFET

60V, 80A, 7mΩ

FDB5800 N-Channel Logic Level PowerTrench

Features

 r

 High performance trench technology for extermely low

 Low Gate Charge

 High power and current handling capability

 Qualified to AEC Q101

 RoHS Compliant

= 5.5mΩ (Typ.), V

DS(ON)

Rdson

= 5V, ID = 80A

GS

Applications

 Motor/ Body Load Control

 ABS Systems

 Power Train Management

 Injection Systems

 DC-DC Converters and Off-Line UPS

®

MOSFET

GATE

SOURCE

TO-263AB

FDB SERIES

©2005 Fairchild Semiconductor Corporation
FDB5800 Rev. A

DRAIN

(FLANGE)

D

G

S

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FDB5800 N-Channel Logic Level PowerTrench

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current

Continuous (TC < 102oC, VGS = 10V)

I

D

Continuous (TC < 90oC, VGS = 5V) 80 A

Continuous (T

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 14 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

TJ, T

STG

Single Pulse Avalanche Energy (Note 1) 652 mJ

Power dissipation 242 W

Derate above 25oC 1.61 W/oC

Operating and Storage Temperature -55 to 175

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-263 0.62

Thermal Resistance Junction to Ambient TO-263 ( Note 2) 62.5

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB5800 FDB5800 TO-263AB 330mm 24mm 800 units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

= 25°C unless otherwise noted

C

o

C/W

o

C/W

o

C/W

o

C

®

MOSFET

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 - 2.5 V

Drain to Source On Resistance

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 628 - pF

Reverse Transfer Capacitance - 262 - pF

Gate Resistance VGS = 0.5V, f = 1MHz - 1.4 - Ω

Total Gate Charge at 10V VGS = 0V to 10V

Total Gate Charge at 5V VGS = 0V to 5V - 55 72 nC

Threshold Gate Charge VGS = 0V to 1V - 6.0 - nC

Gate to Source Gate Charge - 18.4 - nC

Gate Charge Threshold to Plateau - 12.5 - nC

Gate to Drain “Miller” Charge - 20.1 - nC

VDS = 48V - - 1

VGS = 0V TC = 150oC - - 250

ID = 80A, VGS = 10V - 4.6 6.0

ID = 80A, VGS = 4.5V - 5.8 7.2

ID = 80A, VGS = 5V - 5.5 7.0

ID = 80A, VGS = 10V,
TJ = 175oC

VDS = 15V, VGS = 0V,

- 10 12.6

- 6625 - pF

f = 1MHz

- 104 135 nC

VDD = 30V
ID = 80A
Ig = 1.0mA

µA

mΩ

FDB5800 Rev. A

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Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 20.3 - ns

Rise Time - 22.0 - ns

Turn-Off Delay Time - 27.1 - ns

Fall Time - 12.1 - ns

Turn-Off Time - - 59.0 ns

GS

= 5V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes:
1: Starting TJ = 25°C, L = 1mH, IAS = 36A, VDD = 54V, VGS = 10V.
2: Pulse width = 100s.

Source to Drain Diode Voltage

Reverse Recovery Time ISD = 60A, dISD/dt = 100A/µs - - 44 ns

Reverse Recovered Charge ISD = 60A, dISD/dt = 100A/µs - - 57 nC

- - 62.1 ns

VDD = 30V, ID = 80A
VGS = 5V, RGS = 2Ω

I

= 80A - - 1.25 V

SD

ISD = 40A - - 1.0 V

FDB5800 N-Channel Logic Level PowerTrench

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

®

MOSFET

FDB5800 Rev. A

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