Fairchild FDB52N20 service manual

FDB52N20

200V N-Channel MOSFET

FDB52N20 200V N-Channel MOSFET

July 2008

TM

UniFET

Features

• 52A, 200V, R

• Low gate charge ( typical 49 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 66 pF)

rss

= 0.049Ω @VGS = 10 V

DS(on)

G

S

D

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switched mode power supplies and active power factor
correction.

D

{

{

z

z









z

{

{

G

z
z

z

{

{

S

Absolute Maximum Ratings

Symbol Parameter FDB52N20 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

Drain-Source Voltage 200 V
Drain Current - Continuous (TC = 25°C)

- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

52
33

208 A

2520 mJ

52 A

35.7 mJ

4.5 V/ns

357

2.86

300 °C

A
A

W

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDB52N20 Rev. A

Thermal Resistance, Junction-to-Case -- 0.35 °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB52N20 FDB52N20TM D2-PAK 330mm 24mm 800

FDB52N20 200V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.4mH, IAS = 52A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 52A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 200 -- -- V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.2--V/°C

D

V

= 160V, TC = 125°C

DS

--

--

--

--

1

10

µA
µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source

On-Resistance
Forward Transconductance VDS = 40V, ID = 26A

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 540 700 pF

= 10V, ID = 26A -- 0.041 0.049 Ω

V

GS

(Note 4)

-- 35 -- S

-- 2230 2900 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 66 100 pF

Turn-On Delay Time VDD = 100V, ID = 52A

= 25Ω

R

Turn-On Rise Time -- 175 359 ns

G

-- 53 115 ns

Turn-Off Delay Time -- 48 107 n s
Turn-Off Fall Time -- 29 68 ns
Total Gate Charge VDS = 160V, ID = 52A

= 10V

V

Gate-Source Charge -- 19 -- nC

GS

Gate-Drain Charge -- 24 -- nC

(Note 4, 5)

-- 49 63 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 52 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 204 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 52A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 52A

dI

/dt =100A/µs (Note 4)

Reverse Recovery Charge -- 1.3 -- µC

, Starting TJ = 25°C

DSS

F

-- 162 -- ns

FDB52N20 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDB52N20 200V N-Channel MOSFET

, Drain Current [A]

D

I

2

10

1

10

0

10

-1

10

10

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

-1

0

10

VDS, Drain-Source Voltage [V]

* Notes :

1. 250

2. T

10

1

µs Pulse Test

= 25°C

C

2

10

150°C

1

10

, Drain Current [A]

D

I

0

10

2 4 6 8 10 12

25°C

VGS, Gate-Source Voltage [V]

-55°C

* Notes :

1. V

2. 250

= 40V

DS

µs Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.12

0.10

0.08

[Ω],

0.06

DS(ON)

R

0.04

0.02

Drain-Source On-Resistance

0.00
0 25 50 75 100 125 150

VGS = 10V

VGS = 20V

ID, Drain Current [A]

* Note : TJ = 25°C

2

10

1

10

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

150

℃

VSD, Source-Drain voltage [V]

25

℃

* Notes :

1. V

= 0V

GS

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000

5000

4000

3000

2000

Capacitances [pF]

1000

0

-1

10

FDB52N20 Rev. A

C

oss

C

iss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

* Note ;

1. V

2. f = 1 MHz

1

10

= 0 V

GS

12

10

8

VDS = 40V
VDS = 100V
VDS = 160V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 102030405060

* Note : ID = 52A

QG, Total Gate Cha rg e [nC]

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