Fairchild FDB44N25 service manual
FDB44N25
250V N-Channel MOSFE T
FDB44N25 250V N-Channel MOSFET
September 2005
TM
UniFET
Features
• 44A, 250V, R
• Low gate charge ( typical 47 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
( typical 60 pF)
rss
= 0.069Ω @VGS = 10 V
DS(on)
G
D
S
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
D
{
{
z
z
z
{
{
G
z
z
z
{
{
S
Absolute Maximum Ratings
Symbol Parameter FDB44N25 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 250 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T Drain Current - Pulsed Gate-Source voltage ±30 V Single Pulsed Avalanche Energy Avalanche Current (Note 1) 44 A Repetitive Avalanche Energy (Note 1) 30.7 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 4.5 V/ns
44
26.4
176 A
2055 mJ
307
2.45
300 °C
A
A
W
W/°C
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDB44N25 Rev A
Thermal Resistance, Junction-to-Case -- 0.41 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB44N25 FDB44N25TM D2-PAK 330mm 24mm 800
FDB44N25 250V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. M ax Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V
I
= 250µA, Referenced to 25°C--0.25--V/°C
D
V
= 200V, TC = 125°C
DS
--
--
--
--
1
10
µA
µA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 22A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 450 585 pF
= 10V, ID = 22A -- 0.058 0.069 Ω
V
GS
(Note 4)
-- 32 -- S
-- 2210 2870 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 60 90 pF
Turn-On Delay Time VDD = 125V, ID = 44A
= 25Ω
R
Turn-On Rise Time -- 400 810 ns
G
-- 55 120 ns
Turn-Off Delay Time -- 85 180 ns
Turn-Off Fall Time -- 115 240 ns
Total Gate Charge VDS = 200V, ID = 44A
= 10V
V
Gate-Source Charge -- 18 -- nC
GS
Gate-Drain Charge -- 24 -- nC
(Note 4, 5)
-- 47 61 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 44 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 44A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 44A
/dt =100A/µs (Note 4)
dI
Reverse Recovery Charge -- 1.8 -- µC
F
-- 195 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 44A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 25°C
DSS
FDB44N25 Rev A
2 www.fairchildsemi.com
Typical Perfor mance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDB44N25 250V N-Channel MOSFET
2
10
1
10
, Drain Current [A]
D
I
0
10
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
-1
GS
0
10
VDS, Drain-So urce Voltage [V]
2
10
150oC
25oC
Notes :
※
1. 250µs Pulse Test
2. T
= 25
℃
C
1
10
1
10
, Drain Current [A]
D
I
0
10
2 4 6 8 10 12
VGS, Gate-Source Voltage [V]
-55oC
※
1. VDS = 40V
2. 250µ s Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.125
0.100
0.075
[Ω ],
DS(ON)
0.050
R
0.025
Drain-Source On-Resistance
0.000
0 25 50 75 100 125 150
VGS = 10V
ID, Drain Current [A]
VGS = 20V
Note : T
※
2
10
= 25
℃
J
1
10
150
℃
, Reverse Drain Current [A]
DR
I
0
10
0.20.40.60.81.01.21.41.61.8
VSD, Source-Drain voltage [V]
25
℃
Notes :
※
1. VGS = 0V
2. 250µ s Pulse Test
Notes :
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
6000
5000
4000
3000
2000
Capacitances [pF]
1000
FDB44N25 Rev A
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
oss
C
iss
Note ;
※
1. VGS = 0 V
10
2. f = 1 MHz
1
C
rss
0
-1
10
0
10
VDS, Drain-Source Voltage [V]
12
10
8
VDS = 50V
VDS = 125V
VDS = 200V
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 102030405060
※
Note : I
D
= 44A
QG, To ta l Gate Ch arge [nC ]
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