Fairchild FDP42AN15A0, FDB42AN15A0 service manual

FDP42AN15A0 / FDB42AN15A0

N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ

FDP42AN15A0 / FDB42AN15A0

September 2002

Features

•r

•Qg(tot) = 33nC (Typ.), V

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

= 36mΩ (Typ.), V

DS(ON)

= 10V, ID = 12A

GS

= 10V

GS

Applications

• DC/D C C onverter s an d Of f-line UPS

• Distributed Power Architectures and VRMs

• Primary Sw itch for 24V and 48V Systems

• High Voltage Synchronous Re ctifier

• Direct Injection / Diesel Injection Systems

• Elec tr on ic Valve Train Syste ms

Formerly developmental type 82864

DRAIN

(FLANGE)

GATE

SOURCE

TO-263AB

FDB SERIES

(FLANGE)

MOSFET Maximum Ratings

DRAIN

TO-220AB

FDP SERIES

TC = 25°C unless ot herwise noted

SOURCE

DRAIN

GATE

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 150 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 24

C

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 5 A

θJA

35 A

Pulsed Figure 4 A

E

AS

P

D

TJ, T

STG

Single Pulse Avalanche Energy (Note 1) 90 mJ Power dissipation 150 W

o

Derate above 25

C1.00W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristi cs

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-220,TO-263 1.0 Thermal Resistance Junction to Ambient TO-220,TO-263 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB42AN15A0 FDB42AN15A0 TO-263AB 330mm 24mm 800 units FDP42AN15A0 FDP42AN15A0 TO-220AB Tube N/A 50 units

FDP42AN15A0 / FDB42AN15A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test C onditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 150 - - V

V

= 120V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

ID = 12A, VGS = 10V - 0.036 0.042 I

= 6A, VGS = 6V - 0.040 0.060

Drain to S ou r c e On Re si st ance

D

= 12A, VGS = 10V,

I

D

T

= 175oC

J

- 0.090 0.107

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 225 - pF Reverse Transfer Capacitance - 45 - pF

V

= 25V, VGS = 0V,

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 4.2 5.4 nC Gate to Source Gate Charg e - 9.5 - nC Gate Charge Threshold to Plateau - 5.3 - nC

VDD = 75V ID = 12A I

= 1.0m A

g

Gate to Drain “Miller” Charge - 6.9 - nC

- 2150 - pF

30 39 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Tim e - 11 - ns Rise Time - 19 - ns Turn-Off Delay Time - 27 - ns Fall Time - 23 - ns Turn-Off Time - - 74 ns

(VGS = 10V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 0.2mH, IAS = 30A.

Source to Drain Diode Voltage Reverse Recovery Time ISD = 12A, dISD/dt = 100A/µs- -82ns

Reverse Recovered Charge ISD = 12A, dISD/dt = 100A/µs - - 204 nC

- - 46 ns

VDD = 75V, ID = 12A VGS = 10V, RGS = 7.5Ω

I

= 12A - - 1.25 V

SD

= 6A - - 1.0 V

I

SD

FDP42AN15A0 / FDB42AN15A0 Rev. C0

FDP42AN15A0 / FDB42AN15A0

Typical Characteristics

TC = 25°C unless otherwise noted

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

40

30

20

, DRAIN CURRENT (A)

D

10

I

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

-1

10

θJC

10

x R

0

t

1

t

2

+ T

θJC

C

1

10

500

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

-5

10

Figure 3. Normalized Maximum Transient Thermal Impedance

TC = 25oC FOR TEMPERATURES

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

I = I

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

175 - T

25

10

FDP42AN15A0 / FDB42AN15A0 Rev. C0

C

150

0

1

10

FDP42AN15A0 / FDB42AN15A0

Typical Characteristics

200

100

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

SINGLE PULSE TJ = MAX RATED

TC = 25oC

0.1 1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25°C unless otherwise noted

10µs

100µs

DC

Figure 5. Forward Bias Safe Operating Area

80

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V

= 15V

DD

60

1ms

10ms

300

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.001 0.01 0.1 1 10

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

80

VGS = 20V

60

VGS = 10V

VGS = 6V

- VDD)

- VDD) +1]

DSS

40

TJ = 25oC

, DRAIN CURRENT (A)

D

I

20

0

345678

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

40

, DRAIN CURRENT (A)

D

I

20

PULSE DURATION = 80µs

0

012345

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

50

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

45

40

DRAIN TO SOURCE ON RESISTANCE(mΩ)

35

0 10203040

ID, DRAIN CURRENT (A)

VGS = 6V

VGS = 10V

2.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

TC = 25oC

VGS = 10V, ID =12A

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDP42AN15A0 / FDB42AN15A0 Rev. C0