Fairchild FDP4030L, FDB4030L service manual
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FDP4030L / FDB4030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
March 1998
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC/DC converters and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
20 A, 30 V. R
R
= 0.035 Ω @ VGS=10 V
DS(ON)
= 0.055 Ω @ VGS=4.5V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
Symbol Parameter FDP4030L FDB4030L Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1) 20 A
= 25°C unless otherwise noted
C
- Pulsed (Note 1) 60
P
D
Total Power Dissipation @ TC = 25°C 37.5 W
Derate above 25°C 0.25 W/°C
TJ,T
T
L
THERMAL CHARACTERISTICS
R
JC
θ
R
θJA
© 1998 Fairchild Semiconductor Corporation
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case 4 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
FDP4030L Rev.B1
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
OFF CHARACTERISTICS
W
DSS
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 7 A 50 mJ
I
AR
BV
∆BV
I
DSS
DSS
DSS
Maximum Drain-Source Avalanche Current 7 A
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25oC 33 mV/oC
/∆T
J
Zero Gate Voltage Drain Current VDS = 24 V, V
= 0 V 10 µA
GS
TJ = 125°C 1 mA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 1)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 2 V
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25oC -4.1 mV/oC
/∆T
J
Static Drain-Source On-Resistance VGS = 10 V, ID = 10 A 0.025 0.035
TJ = 125°C 0.048 0.06
VGS = 10 V, ID = 4.5 A 0.046 0.055
I
g
D(on)
FS
On-State Drain Current VGS = 10 V, VDS = 10 V 30 A
Forward Transconductance VDS = 10 V, ID = 10 A 11 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 210 pF
f = 1.0 MHz
Reverse Transfer Capacitance 70 pF
365 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 15 V, ID = 10 A,
Turn - On Rise Time 8 15 nS
VGS = 10 V, R
GEN
= 10 Ω
8 15 nS
Turn - Off Delay Time 20 40 nS
Turn - Off Fall Time 10 20 nS
Total Gate Charge V
Gate-Source Charge 2 nC
= 24 V
DS
ID = 10 A, VGS= 10 V
13 18 nC
Gate-Drain Charge 4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current 20 A
ISM Maximum Pulsed Drain-Source Diode Forward Current 60 A
V
SD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A (Note 1) 1.12 1.3 V
TJ = 125°C 1.08 1.2
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Ω
FDP4030L Rev.B1
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