Fairchild FDB3860 service manual

FDB3860

N-Channel PowerTrench® MOSFET

100 V, 30 A, 37 mΩ

Features

 Max r
 High performance trench technology for extremely low r
 100% UIL tested
 RoHS Compliant

= 37 mΩ at VGS = 10 V, ID = 5.9 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low r
ruggedness for a wide range of switching applications

Applications

 DC-AC Conversion
 Synchronous Rectifier

March 2009

and low Qg figure of merit, with avalanche

DS(on)

FDB3860 N-Channel PowerTrench

.

®

MOSFET

D

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Silicon limited) TC = 25 °C 30

-Pulsed 60
Single Pulse Avalanche Energy (Note 3) 96 mJ
Power Dissipation TC = 25 °C 71
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

TO-263AB

FDB Series

= 25 °C unless otherwise noted

C

= 25 °C (Note 1a) 6.4

A

= 25 °C (Note 1a) 3.1

A

G

D

S

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.75
Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

A -Continuous T

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDB3860 FDB3860 TO-263AB 330 mm 24 mm 800 units

©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C

1

www.fairchildsemi.com

FDB3860 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 µA, referenced to 25 °C 104 mV/°C

D

= 0 V 1 µA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 2.5 3.8 4.5 V
Gate to Source Threshold Voltage

Temperature Coefficient
Static Drain to Source On Resistance

I

= 250 µA, referenced to 25 °C -11 mV/°C

D

V

= 10 V, ID = 5.9 A 31 37

GS

= 10 V, ID = 5.9 A, TJ = 125 °C 56 67

V

GS

Forward Transconductance VDS = 10 V, ID = 5.9 A 18 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 100 130 pF
Reverse Transfer Capacitance 40 65 pF
Gate Resistance 1.7 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Rise Time 612ns
Turn-Off Delay Time 17 31 ns
Fall Time 310ns
Total Gate Charge at 10 V
Gate to Source Charge 6.9 nC
Gate to Drain “Miller” Charge 5.4 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 5.9 A,

V

DD

V

= 10 V, R

GS

= 50 V, ID = 5.9 A

V

DD

GEN

= 6 Ω

1310 1740 pF

12 22 ns

21 30 nC

mΩ

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:
1: R

θJA

R

θJC

a. 40 °C/W when mounted on a 1 in
b. 62.5 °C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting T

©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 37 60 nC

is the sum of the juncti on-t o- cas e a nd cas e-t o -am bi en t th e rma l res ist an ce whe re the ca s e th er ma l ref ere nc e i s de f ine d as the s older mounting surface of the drain pins.

is guaranteed by design while R

= 25 °C, L = 3 mH, IAS = 8 A, VDD = 100 V, VGS = 10 V.

J

is determined by the user’s board design.

θJA

2

pad of 2 oz copper

V

= 0 V, IS = 2.0 A (Note 2) 0.7 1.2

GS

= 0 V, IS = 5.9 A (Note 2) 0.8 1.3

V

GS

= 5.9 A, di/dt = 100 A/µs

I

F

2

35 56 ns

V

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