Fairchild FDB3682, FDP3682 service manual

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FDB3682 / FDP3682

N-Channel PowerTrench® MOSFET
100V, 32A, 36mΩ

FDB36 82 / FDP3682

September 2002

Features

• r

• Q

• Low Miller Charge

• Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82755

= 32mΩ (Typ.), V

DS(ON)

(tot) = 18.5nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 32A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Volt age Synchronous Rectifier

• Direct Injection / Diesel Injection System

• 42V Automo tive Load Co ntrol

• Electro nic Valve Train System

DRAIN

(FLANGE)

GATE

SOURCE

TO-263AB

FDB SERIES

(FLANGE)

MOSFET Maximum Ratings T

DRAIN

= 25°C unless otherwise noted

C

SOURCE

DRAIN

TO-220AB

FDP SERIES

GATE

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Curr e nt
Continuous (T

I

D

Continuous (T
Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 23 A

C

= 25oC, VGS = 10V, R

amb

= 43oC/W) 6 A

θJA

32 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 55 mJ
Power dissipation 95 W

o

Derate above 25

C0.63W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristi cs

R

θJC

R

θJA

R

θJA

This product ha s been des igned to me et the e xtr eme test c ondit ions and envir onment deman ded by the automot ive indus t ry. For a

All Fairchild Semiconductor prod ucts are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

©2002 Fairchild Semiconductor Corporation

Thermal Resistance Junction t o Case TO-220, TO-263 1.58
Thermal Resistance Junction t o Ambient TO-220, TO-263 (Note 2) 62
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDB3682 / FDP3682 Rev. B

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB3682 FDB3682 TO-263AB 330mm 24mm 800 units
FDP3682 FDP3682 TO-220AB Tube N/A 50 units

FDB36 82 / FDP3682

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain t o Source Breakdown Volta ge ID = 250µA, VGS = 0V 100 - - V

V

= 80V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

=32A, VGS=10V - 0.032 0.036

I

Drain to Source On Resistance

D

= 16A, VGS = 6V, - 0.040 0.060

D

=32A, VGS=10V, TC=175oC - 0.080 0.090

I

D

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 190 - pF
Reverse Transfer Capacitance - 45 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total G ate Ch arg e at 10 V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 2.4 3.6 nC
Gate to Source Gate Charge - 6.5 - nC
Gate Charge Threshold to Plateau - 4.1 - nC

= 50V

V

DD

I

= 32A

D

I

= 1.0m A

g

Gate to Drain “Miller” Charge - 4.6 - nC

-1250- pF

-18.528nC

µA

ΩI

Resistive Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 9 - ns
Rise Time - 46 - ns
T u rn-Off Delay Time - 26 - ns
Fall Time - 32 - ns
Turn-Off Time - - 87 ns

(VGS = 10V)

V

DD

V

GS

--83ns

= 50V, ID = 32A
= 10V, RGS = 16Ω

Drain-Source Diode Characteristics

I

= 32A - - 1 .25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: Pulse Width = 100s

©2002 Fairchild Semiconductor Corporation FDB3682 / FDP3682 Rev. B

Source to Drain Di ode Voltage
Reverse Recovery Time ISD = 32A, dISD/dt = 100A/µs- - 55 ns

Reverse Recovery Charge ISD = 32A, dISD/dt = 100A/µs- - 90 nC

= 25°C, L = 0.27mH, IAS = 20A.

J

SD

I

= 16A - - 1.0 V

SD

FDB36 82 / FDP3682

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

150

35

V

= 10V

30

GS

25

20

15

, DRAIN CURRENT (A)

10

D

I

5

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Continuous Drain Curr ent vs

Case Temperature

, NORMALIZED

θJC

Z

400

100

, PEAK CURRENT (A)

DM

I

0.1

THERMAL IMPEDANCE

0.01

30

10

-5

10

VGS = 10V

-5

SINGLE PULSE

-4

10

-3

10

-2

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

P

DM

1/t2

x R

θJC

0

10

o

C DERATE PEAK

175 - T

25

0

10

t

θJC

150

1

t

2

+ T

C

1

10

C

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation FDB3682 / FDP3682 Rev. B

Typical Characteristics T

= 25°C unless otherwise noted

C

FDB36 82 / FDP3682

200

100

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

SINGLE PULSE
TJ = MAX R ATED

T

= 25oC

C

0.1
1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10ms

DC

1ms

10µs

100µs

Figure 5. Forward Bias Safe Operating Area

80

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

60

40

TJ = 175oC

100

If R = 0

200

tAV = (L)(IAS)/(1.3*RATED BV
If R ≠ 0

t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

10

, AVALANCHE CURRENT (A)

AS

I

1

STARTING TJ = 150oC

0.001 0.01 0.1 1
tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

80

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

60

TC = 25oC

40

VGS = 20V

- VDD) +1]

10

VGS = 10V

VGS = 6V

, DRAIN CURRENT (A)

D

I

20

0

TJ = 25oC

TJ = -55oC

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

60

PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX

50

40

30

DRAIN TO SOURCE ON RESISTANCE (mΩ)

20

0 5 10 15 20 25 30 35

Id, DRAIN CURRENT (A)

VGS = 6V

VGS = 10V

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

, DRAIN CURRENT (A)

D

I

20

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

3.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.5

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

VGS = 10V, ID =32A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

©2002 Fairchild Semiconductor Corporation FDB3682 / FDP3682 Rev. B