Fairchild FDB3502 service manual

tm

FDB3502

B

N-Channel Power Trench® MOSFET

75V, 14A, 47mΩ

Features

 Max r
 100% UIL Tested
 RoHS Compliant

= 47mΩ at VGS = 10V, ID = 6A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

May 2008

®

process that has

FDB3502 N-Channel Power Trench

Application

 Synchronous rectifier

D

D

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 14

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40
Single Pulse Avalanche Energy (Note 3) 54 mJ
Power Dissipation TC = 25°C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

TO-263A

FDB Series

= 25°C unless otherwise noted

C

= 25°C 22

C

= 25°C (Note 1a) 6

A

= 25°C (Note 1a) 3.1

A

G

S

®

MOSFET

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB3502 FDB3502 TO-263AB 330 mm 24 mm 800 units

©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2

°C/W

1

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FDB3502 N-Channel Power Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 75 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current VGS = ±20V, V

ID = 250µA, referenced to 25°C 70 mV/°C

= 0V, VDS = 60V, 1 µA

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.8 4.5 V
Gate to Source Threshold Voltage

Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = 10V, ID = 6A 13 S

ID = 250µA, referenced to 25°C -10 mV/°C
VGS = 10V, ID = 6A 37 47

VGS = 10V, ID = 6A, TJ = 125°C 63 80

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 75 105 pF
Reverse Transfer Capacitance 35 40 pF

VDS = 40V, VGS = 0V,
f = 1MHz

615 815 pF

Gate Resistance f = 1MHz 1.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Rise Time 3 10 ns
Turn-Off Delay Time 13 22 ns

VDD = 40V, ID = 6A,
VGS = 10V, R

GEN

= 6Ω

9 17 ns

Fall Time 3 10 ns
Total Gate Charge at 10V
Gate to Source Charge 4 nC
Gate to Drain “Miller” Charge 3 nC

VDD = 40V
ID = 6A

11 15 nC

mΩ

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

1: R

θJA

R

θJC

a. 40°C/W when mounted on a 1 in
b. 62.5°C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 75V, VGS = 10V.

©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 17 32 nC

is guaranteed by design while R

is determined by the user’s board design.

θJA

2

pad of 2 oz copper

V

= 0V, IS = 2.6A (Note 2) 0.78 1.2

GS

V

= 0V, IS = 6A (Note 2) 0.83 1.3

GS

IF = 6A, di/dt = 100A/µs

2

25 41 ns

V

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