Fairchild FDB28N30 service manual

tm

FDB28N30

D

G

S

D2-PAK

G

S

D

N-Channel MOSFET

300V, 28A, 0.129Ω

FDB28N30 N-Channel MOSFET

June 2007

TM

UniFET

Features

•R

• Low gate charge ( Typ. 39nC)

• Low Crss ( Typ. 35pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

T

L

= 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A

DS(on)

= 25oC unless otherwise noted*

C

Symbol Parameter Ratings Units

Drain to Source Voltage 300 V

Gate to Source Voltage ±30 V

-Continuous (T

-Continuous (T

(T

= 25oC) 250 W

C

- Derate above 25

STG

D r a i n C u r r e n t

D r a i n C u r r e n t - P u l s e d (Note 1) 112 A

Single Pulsed Avalanche Energy (Note 2) 588 mJ

Avalanche Current (Note 1) 28 A

Repetitive Avalanche Energy (Note 1) 25 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

= 25oC) 28

C

= 100oC) 19

C

o

C2.0W/

300

o

o

A

o

C

C

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

* Thermal Resistance, Junction to Ambient* 40

θJA

R

θJA

*When mounted on the minimum pad size recommended (PCB Mount)

©2007 Fairchild Semiconductor Corporation
FDB28N30 Rev. A

Thermal Resistance, Junction to Case 0.5

Thermal Resistance, Junction to Ambient 62.5

o

C/WR

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FDB28N30 N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDB28N30 FDB28N30TM D2-PAK 330mm 24mm 800

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

/ ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 300 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC-0.4-V/

D

V

= 300V, V

DS

= 240V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 14A - 0.108 0.129 Ω

V

Forward Transconductance

Input Capacitance

Output Capacitance - 305 405 pF

Reverse Transfer Capacitance - 35 50 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 12 - nC

Gate to Drain “Miller” Charge - 17 - nC

= 40V, ID = 14A (Note 4)

DS

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 240V, ID = 28A

DS

V

= 10V

GS

( Note 4 , 5)

- 24.8 - S

- 1690 2250 pF

-3950nC

μA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 135 280 ns

Turn-Off Delay Time - 79 168 ns

Turn-Off Fall Time - 69 148 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.5mH, I

3. I

≤ 28A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 28 A

Maximum Pulsed Drain to Source Diode Forward Current - - 112 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 2.7 - μC

= 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 150V, ID = 28A

V

DD

R

= 25Ω

G

(N ote 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Not e 4)

F

= 28A - - 1.4 V

SD

= 28A

SD

-3580ns

- 279 - ns

FDB28N30 Rev. A

2

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Typical Performance Characteristics

110

1

10

100

0.4

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 10.0 V

8.0 V

7.0 V

6.5 V
6 V

5.5 V

I

D

,Drain Current[A]

VDS,Drain-Source Voltage[V]

0.5

246810

0.1

1

10

100

-55oC

150oC

* Notes :

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

,Drain Current[A]

VGS,Gate-Source Voltage[V]

0255075

0.10

0.15

0.20

0.25

0.30

* Note : TJ = 25oC

VGS = 20V

VGS = 10V

R

DS(on)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.0 0.5 1.0 1.5 2.0

1

10

100

Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

200

10

-1

10

0

10

1

0

1500

3000

4500

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

30

0 8 16 24 32 40

0

2

4

6

8

10

*Note: ID = 28A

VDS = 60V
V

DS

= 150V

V

DS

= 240V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDB28N30 N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDB28N30 Rev. A

3

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