Fairchild FDB2710 service manual
tm
FDB2710
250V N-Channel PowerTrench MOSFET
FDB2710 250V N-Channel PowerTrench MOSFET
November 2006
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Description
• 50A, 250V, R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
= 36.3mΩ @VGS = 10 V
DS(on)
Application
• PDP application
D
G
G
S
D
S
Absolute Maximum Ratings
Symbol Parameter Ratings Unit
V
DS
V
GS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
T
J, TSTG
T
L
Drain-Source Voltage 250 V
Gate-Source voltage ± 30 V
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Single Pulsed Avalanche Energy
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
50
31.3
See Figure 9
145 mJ
260
2.1
300 °C
W/°C
DS(on)
A
A
A
W
Thermal Characteristics
Symbol Parameter Min Max Unit
R
θJC
R
* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W
θJA
R
θJA
*When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDB2710 Rev. A
Thermal Resistance, Junction-to-Case -- 0.48 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FDB2710 FDB2710 D2-Pak 330mm 24mm 800
FDB2710 250V N-Channel PowerTrench MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 250 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V
ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C
VDS = 250V, VGS = 0V,TC = 125°C
--
--
--
--
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 4.0 5.0 V
Static Drain-Source On-Resistance VGS = 10V, ID = 25A -- 36.3 42.5 mΩ
Forward Transconductance VDS = 10V, ID = 25A
Input Capacitance
Output Capacitance -- 426 570 pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
(Note 4)
-- 63 -- S
-- 5470 7280 pF
Reverse Transfer Capacitance -- 97 146 pF
Turn-O n Delay Time VDD = 125V, ID = 50A
Turn-O n Ris e Ti me -- 252 515 ns
VGS = 10V, R
GEN
= 25Ω
-- 80 170 ns
Turn-O ff Delay Time -- 112 235 ns
Turn-O ff Fall Time -- 154 320 ns
Total Gate Charge VDS = 125V, ID = 50A
Gate-Source Charge -- 34 -- nC
VGS = 10V
Gate-Drain Charge -- 18 -- nC
(Note 4, 5)
-- 78 101 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A -- -- 1.2 V
Reverse Recovery Time VGS = 0V, IS = 50A
Reverse Recovery Charge -- 1.3 -- µC
dIF/dt =100A/µs (Note 4)
-- 163 -- ns
1
500µAµA
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 100A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 25°C
DSS
FDB2710 Rev. A
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
500
100
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
GS
10
,Drain Current[A]
D
I
* Notes :
µs Pulse Test
1. 250
= 25oC
2. T
1
0.1 1 10
VDS,Drain-Source Voltage[V]
C
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.07
0.06
250
100
150oC
10
,Drain Current[A]
D
I
1
46810
25oC
-55oC
* Notes :
1. V
DS
2. 250
= 20V
µs Pulse Test
VGS,Gate-Source Voltage[V]
150
* Notes :
100
1. V
2. 250
=0V
GS
µs Pulse Test
FDB2710 250V N-Channel PowerTrench MOSFET
0.05
[Ω],
0.04
DS(ON)
R
VGS = 10V
VGS = 20V
0.03
Drain-Source On-Resistance
0.02
0 25 50 75 100 125 150
* Note : TJ = 25oC
ID, Drain Current [A]
10
, Reverse Drain Current [A]
S
I
TA = 150oC
1
0.2 0.4 0.6 0.8 1.0 1.2
TA = 25oC
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Capacitances [pF]
9000
6000
3000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
= C
rss
gd
0
-1
10
VDS, Drain-Source Voltage [V]
gd
C
iss
C
oss
* Note:
1. V
= 0V
C
rss
0
10
GS
2. f = 1MHz
1
10
30
10
VDS = 50V
V
= 125V
8
V
DS
DS
= 200V
6
4
, Gate-Source Voltage [V]
GS
V
2
0
0 1020304050607080
* Note : ID = 50A
Qg, Total Gate Charge [nC]
FDB2710 Rev. A
3 www.fairchildsemi.com
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