Fairchild FDB2614 service manual
tm
FDB2614
200V N-Channel PowerTrench MOSFET
FDB2614 200V N-Channel PowerTrench MOSFET
November 2006
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Description
• 62A, 200V, R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
= 22.9mΩ @VGS = 10 V
DS(on)
Application
• PDP application
D
G
G
S
D
S
Absolute Maximum Ratings
Symbol Parameter Ratings Unit
V
DS
V
GS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
*Drain current limited by maximum junction temperature
Drain-Source Voltage 200 V
Gate-Source Voltage ± 30 V
Drain Current - Continuous (TC = 25°C)
Drain Current - Pulsed
Single Pulsed Avalanche Energy
Power Dissipation (TC = 25°C)
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Continuous (TC = 100°C)
(Note 1)
(Note 2)
(Note 3)
- Derate above 25°C
62
39.3
see Figure 9
145 mJ
4.5 V/ns
260
2.1
300 °C
DS(on)
A
A
A
W
W/°C
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W
θJA
R
θJA
*When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDB2614 Rev. A
Thermal Resistance, Junction-to-Case -- 0.48 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FDB2614 FDB2614 D2-PAK 330mm 24mm 800
FDB2614 200V N-Channel PowerTrench MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 62A, di/dt ≤ 100A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 200 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V
ID = 250µA, Referenced to 25°C -- 0.2 -- V/°C
VDS = 200V, VGS = 0V, TJ = 125°C
--
--
--
--
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 4.0 5.0 V
Static Drain-Source On-Resistance VGS = 10V, ID = 31A -- 22.9 27 mΩ
Forward Transconductance VDS = 10V, ID = 31A
Input Capacitance
Output Capacitance -- 505 675 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
(Note 4)
-- 72 -- S
-- 5435 7230 pF
Reverse Transfer Capacitance -- 11 0 165 pF
Turn-O n Delay Time
Turn-O n Ris e Ti me -- 284 560 ns
Turn-O ff Delay Time -- 103 220 ns
Turn-O ff Fall Time -- 162 335 ns
VDD = 100V, ID = 62A
VGS = 10V, R
GEN
= 25Ω
(Note 4, 5)
Total Gate Charge
Gate-Source Charge -- 35 -- nC
Gate-Drain Charge -- 18 -- nC
VDS = 100V, ID = 62A
VGS = 10V
(Note 4, 5)
-- 77 165 ns
-- 76 99 nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 186 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 62A -- -- 1.2 V
Reverse Recovery Time VGS = 0V, IS = 62A
Reverse Recovery Charge -- 0.81 -- µC
, Starting TJ = 25°C
DSS
dIF/dt =100A/µs (Note 4)
-- 145 -- ns
1
500µAµA
FDB2614 Rev. A
2 www.fairchildsemi.com
FDB2614 200V N-Channel PowerTrench MOSFET
Figure 1.
On-Region Characteristics Figure 2.
500
V
Top : 15.0 V
10.0 V
8.0 V
100
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10
,Drain Current[A]
D
I
1
0.1 1 10
Figure 3.
GS
* Notes :
1. 250
2. T
VDS,Drain-Source Voltage[V]
O n - R e s i s t a n c e V a r i a t i o n v s . D r a i n
Current and Gate Voltage
0.06
0.05
0.04
[Ω],
DS(ON)
R
0.03
VGS = 10V
µs Pulse Test
= 25oC
C
* Note : TJ = 25oC
Transfer Characteristics
1000
* Notes :
1. V
= 10V
DS
µs Pulse Test
2. 250
100
10
,Drain Current[A]
D
I
1
2468
Figure 4.
VGS,Gate-Source Voltage[V]
Body Diode Forward Voltage Varia-
150oC
-55oC
25oC
tion vs. Source Current and Temperature
TA = 150oC
TA = 25oC
1000
* Notes :
= 0V
1. V
GS
= 250µA
2. I
D
100
10
Drain-Source On-Resistance
0.02
0.015
Figure 5.
9000
6000
3000
Capacitances [pF]
0
0.1 1 10
VGS = 20V
, Reverse Drain Current [A]
I
DR
0 50 100 150 200
ID, Drain Current [A]
Capacitance Characteristics Figure 6.
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
C
iss
C
oss
C
rss
rss
= C
gd
gd
VDS, Drain-Source Voltage [V]
* Note:
1. V
= 0V
GS
2. f = 1MHz
30
10
, Gate-Source Voltage [V]
GS
V
1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
Gate Charge Characteristics
VDS = 40V
= 100V
V
8
6
4
2
0
0 20406080100
DS
V
= 160V
DS
* Note : ID = 62A
Qg, Total Gate Ch arge [nC]
FDB2614 Rev. A
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