Fairchild FDB2552, FDP2552 service manual

FDB2552 / FDP2552

N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ

FDB25 52 / FDP2552

February 2012

Features

•r

•Q

• Low Miller Charge

•Low Q

= 32mΩ (Typ.), V

DS(ON)

(tot) = 39nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 16A

GS

= 10V

GS

Applications

• DC/D C C onverters an d Of f- li ne UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 24V and 48V Syst ems

• High Voltage Synchronous Rectifier

• UIS Capability (Single Pulse and Repetitive Pulse)

Formerly developmental type 82869

DRAIN

(FLANGE)

SOURCE

DRAIN

GA TE

TO-220AB

FDP SERIES

MOSFET Maximum Ratings T

GATE

SOURCE

TO-263AB

FDB SERIES

= 25°C unless otherwise not ed

C

DRAIN

(FLANGE)

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 150 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 26 A

C

= 25oC, VGS = 10V) with R

amb

= 43oC/W 5 A

θJA

37 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 390 mJ Power dissipation 150 W

o

Derate above 25

C1.0W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-220, TO-263 1.0 Thermal Resistance Junction t o Ambient TO- 220, TO-263 (Note 2) 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

o

C/W

o

C/W

o

C/W

Rev. C

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB2552 FDB2552 TO-263AB 330mm 24mm 800 units FDP2552 FDP2552 TO-220AB Tube N/A 50 units

FDB25 52 / FDP2552

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 150 - - V

V

= 120V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 16A, VGS = 10V - 0.032 0.036

I

D

I

= 8A, VGS = 6V - 0.036 0.054

Drain to S ou r c e On Re si st ance

D

= 16A, VGS = 10V,

I

D

T

= 175oC

J

- 0.084 0.097

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitanc e - 285 - pF Reverse Transfer Capacitance - 55 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 5.2 6.8 nC Gate to Source Gate Charg e - 13.5 - nC Gate Charge Threshold to Plateau - 8.4 - nC

V

DD

I

= 16A

D

I

= 1.0m A

g

= 75V

Gate to Drain “Miller” Charge - 8.3 - nC

- 2800 - pF

39 51 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 12 - ns Rise Time - 29 - ns Turn-Off D elay Time - 36 - ns Fall Time - 29 - ns Turn-Off Time - - 97 ns

(VGS = 10V)

V

= 75V, ID = 16A

DD

V

= 10V, RGS = 8.2Ω

GS

- - 62 ns

Drain-Source Diode Characteristics

I

= 16A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 7.8mH, IAS = 10A. 2: Pulse Width = 100s

Source to Drain Diode Voltage Reverse Recovery Time ISD = 16A, dISD/dt = 100A/µs- -90ns

Reverse Recovered Charge ISD = 16A, dISD/dt = 100A/µs - - 242 nC

SD

= 8A - - 1.0 V

I

SD

FDB25 52 / FDP2552

Typical Characteristics T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

TC, CASE TEMPERATURE (oC)

= 25°C unless otherwise noted

C

125

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

40

30

20

, DRAIN CURRENT (A)

D

I

10

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

-1

10

θJC

10

0

x R

t

1

t

2

+ T

θJC

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

700

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

30

-5

10

-4

10

-3

10

-2

10

t, PULSE WIDTH (s)

-1

10

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

Typical Characteristics T

= 25°C unless otherwise noted

C

FDB25 52 / FDP2552

300

100

10

OPERATION IN THIS

AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r

1

SINGLE PULSE TJ = MAX RATED

TC = 25oC

0.1 1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

80

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V

= 15V

DD

60

40

TJ = 25oC

, DRAIN CURRENT (A)

D

I

20

TJ = 175oC

0

3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

100

If R = 0

300

tAV = (L)(IAS)/(1.3*RATED BV If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

10

, AVALANCHE CURRENT (A)

AS

I

1

STARTING TJ = 150oC

0.1 1 100.01

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

80

VGS = 10V

60

VGS = 6V

40

VGS = 5V

, DRAIN CURRENT (A)

D

I

20

PULSE DURATION = 80µs

0

012345

VDS, DRAIN TO SOURCE VOLTAGE (V)

DUTY CYCLE = 0.5% MAX

TC = 25oC

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

42

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

40

38

36

34

32

DRAIN TO SOURCE ON RESISTANCE(mΩ)

30

0 10203040

VGS = 6V

VGS = 10V

ID, DRAIN CURRENT (A)

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

3.0

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.5

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 16A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature