Fairchild FDP16AN08A0, FDB16AN08A0 service manual

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FDP16AN08A0 / FDB16AN08A0

N-Channel PowerTrench® MOSFET 75V, 58A, 16mΩ

FDP16AN08A0 / FDB16AN08A0

July 2002

Features

•r

•Q

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82660

DRAIN

(FLANGE)

MOSFET Maximum Ratings T

= 13mΩ (Typ.), V

DS(ON)

(tot) = 28nC (Typ.), V

g

GS

TO-220AB

FDP SERIES

= 10V, ID = 58A

= 10V

SOURCE

DRAIN

GATE

C

GA TE

SOURCE

= 25°C unless otherwise noted

Applications

• 42V Automotiv e Load Control

• Starter / Alternator Systems

• Electronic Power Steering Systems

• Electronic Valve Train Systems

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 24V and 48V systems

G

TO-263AB

FDB SERIES

DRAIN

(FLANGE)

D

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 75 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 44

C

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 9 A

θJA

58 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 117 mJ Power dissipation 135 W

o

Derate above 25

C0.9W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

Thermal Resistance Junction to Case TO-220,TO-263 1.11 Thermal Resistance Junction to Ambient TO-220,TO-263 62 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad ar ea 43

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

systems certification.

FDP16AN08A0 / FDB1 6AN08A0 Rev. A1

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB16AN08A0 FDB16AN08A0 TO-263AB 330mm 24mm 800 units FDP16AN08A0 FDP16AN08A0 TO-220AB Tube N/A 50 units

FDP16AN08A0 / FDB16AN08A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 75 - - V

V

= 60V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 58A, VGS = 10V - 0.013 0.016

D

I

= 29A, VGS = 6V - 0.019 0.029

Drain to S ou r c e On Re si st ance

D

= 58A, VGS = 10V,

I

D

T

= 175oC

J

- 0.032 0.037

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 288 - pF Reverse Transfer Capacitance - 88 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 3.5 5 nC Gate to Source Gate Charg e - 1 1 - nC Gate Charge Threshold to Plateau - 7.6 - nC

V

DD

I

= 58A

D

I

= 1.0m A

g

= 40V

Gate to Drain “Miller” Charge - 6.4 - nC

- 1857 - pF

28 42 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 8 - ns Rise Time - 82 - ns Turn-Off Delay Time - 28 - ns Fall Time - 30 - ns Turn-Off Time - - 86 ns

(VGS = 10V)

V

= 40V, ID = 58A

DD

V

= 10V, RGS = 10Ω

GS

--135ns

Drain-Source Diode Characteristics

I

= 58A - - 1.2 5 V

V

SD

t

rr

Q

RR

Notes: 1: Starting T

Source to Drain Diode Voltage Reverse Recovery Time ISD = 58A, dISD/dt = 100A/µs- -35ns

Reverse Recovered Charge ISD = 58A, dISD/dt = 100A/µs- -36nC

= 25°C, L = 260µH, IAS = 30A.

J

SD

I

= 29A - - 1.0 V

SD

FDP16AN08A0 / FDB16AN08A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

60

40

20

, DRAIN CURRENT (A)

D

I

0

150

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

x R

θJC

t

+ T

1

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

700

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 10V

, PEAK CURRENT (A)

100

DM

I

50

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

FDP16AN08A0 / FDB16AN08A0

Typical Characteristics T

500

100

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

, DRAIN CURRENT (A)

D

1

I

SINGLE PULSE TJ = MAX RATED

T

C

0.1 1 10 100

DS(ON)

= 25oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

100

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V

= 15V

DD

75

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R

≠

0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

100

VGS = 20V

75

VGS = 10V

VGS = 7V

50

, DRAIN CURRENT (A)

D

I

TJ = 25oC

25

0

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

TJ = 175oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

0.022

0.020

0.018

0.016

0.014

DRAIN TO SOURCE ON RESISTANCE(mΩ)

0.012 0 102030405060

VGS = 6V

VGS = 10V

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

50

, DRAIN CURRENT (A)

D

I

25

0

01234

2.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

VGS = 6V

VGS = 5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V, ID =58A

TJ, JUNCTION TEMPERATURE (oC)

TC = 25oC

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature