Fairchild FDB12N50TM service manual
tm
FDB12N50TM
D
G
S
D2-PAK
FDB Series
G
S
D
I2-PAK
FDI Series
GSD
N-Channel MOSFET
500V, 11.5A, 0.65Ω
FDB12N50 / FDI12N50 N-Channel MOSFET
June 2007
TM
UniFET
Features
•R
• Low gate charge ( Typ. 22nC)
• Low Crss ( Typ. 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
V
I
D
I
DM
E
I
AR
E
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
T
T
= 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A
DS(on)
= 25oC unless otherwise noted
C
Symbol Parameter Ratings Units
DSS
GSS
AS
AR
D
, T
J
L
STG
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
D r a i n C u r r e n t - P u l s e d (Note 1) 46 A
Single Pulsed Avalanche Energy (Note 2) 456 mJ
Avalanche Current (Note 1) 11.5 A
Repetitive Avalanche Energy (Note 1) 16.7 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-Continuous (T
-Continuous (T
(T
= 25oC) 165 W
C
- Derate above 25
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 11.5
C
= 100oC) 6.9
C
o
C1.33W/
300
A
o
C
o
C
o
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
* Thermal Resistance, Junction to Ambient* 40
θJA
R
θJA
*When mounted on the minimum pad size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation
FDB12N50TM Rev. A1
Thermal Resistance, Junction to Case 0.75
Thermal Resistance, Junction to Ambient 62.5
o
www.fairchildsemi.com1
C/WR
FDB12N50 / FDI12N50 N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
2
FDB12N50 FDB12N50TM D
FDI12N50 FDI12N50TU I
-PAK 330mm 24mm 800
2
-PAK - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC - 0.66 - V/oC
D
V
= 500V, V
DS
= 400V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 6A - 0.55 0.65 Ω
V
Forward Transconductance
Input Capacitance
Output Capacitance - 140 190 pF
Reverse Transfer Capacitance - 12 17 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 6 - nC
Gate to Drain “Miller” Charge - 10 - nC
= 25V, ID = 6A (Note 4)
DS
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 400V, ID = 11.5A
DS
V
= 10V
GS
( Note 4 , 5)
-11-S
- 985 1315 pF
-2230nC
μA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 60 130 ns
Turn-Off Delay Time - 45 105 ns
Turn-Off Fall Time - 35 85 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11.5A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 11.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 46 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time VGS = 0V, I
Reverse Recovery Charge - 3.8 - μC
, Starting TJ = 25°C
DSS
= 250V, ID = 11.5A
V
DD
R
= 25Ω
G
(Note 4 , 5)
= 0V, I
GS
/dt = 100A/μs (Not e 4)
dI
F
= 11.5A - - 1.4 V
SD
= 11.5A
SD
-2560ns
- 370 - ns
FDB12N50TM Rev. A1
2
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Typical Performance Characteristics
46810
0.1
1
10
40
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
110
1
10
20
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
30
0 5 10 15 20 25
0.4
0.6
0.8
1.0
1.2
1.4
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.3 0.6 0.9 1.2 1.5 1.8
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10
0
500
1000
1500
2000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0 5 10 15 20 25
0
2
4
6
8
10
*Note: ID = 11.5A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDB12N50 / FDI12N50 N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDB12N50TM Rev. A1
3
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