Fairchild FDB12N50F service manual

tm

FDB12N50F

D

G

S

D

G

S

TO-263AB

FDB Series

D2-PAK

N-Channel MOSFET, FRFET

500V, 11.5A, 0.7Ω

FDB12N50F N-Channel MOSFET

February 2012

TM

UniFET

Features

•R

• Low gate charge ( Typ. 21nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improve dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A

DS(on)

( Typ. 11pF)

rss

= 25oC unless otherwise noted

C

Symbol Parameter Ratings Units

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

-Continuous (T

-Continuous (T

(T

= 25oC) 165 W

C

- Derate above 25

STG

D r a i n C u r r e n t

D r a i n C u r r e n t - P u l s e d (Note 1) 46 A

Single Pulsed Avalanche Energy (Note 2) 456 mJ

Avalanche Current (Note 1) 11.5 A

Repetitive Avalanche Energy (Note 1) 16.5 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advance technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switching mode power supplies and active power factor
correction.

= 25oC) 11.5

C

= 100oC) 6.9

C

o

C1.33W/

300

o

o

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 0.75

Thermal Resistance, Junction to Ambient 62.5

o

C/W

A

o

C

C

C

©2012 Fairchild Semiconductor Corporation
FDB12N50F Rev.C0

www.fairchildsemi.com1

FDB12N50F N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDB12N50F FDB12N50FTM_WS D2-PAK 330mm 24mm 800

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

/ ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC-0.5-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 6A - 0.59 0.7 Ω

Forward Transconductance VDS = 40V, ID = 6A (Note 4) -12-S

Input Capacitance

Output Capacitance - 135 180 pF

Reverse Transfer Capacitance - 11 17 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 400V, ID = 11.5A

Gate to Source Gate Charge - 6 - nC

Gate to Drain “Miller” Charge - 9 - nC

DS

V

= 10V

GS

( Note 4 , 5)

- 1050 1395 pF

-2130nC

μA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 45 100 ns

Turn-Off Delay Time - 50 110 ns

Turn-Off Fall Time - 35 80 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 6.9mH, I

≤ 11.5A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 11.5 A

Maximum Pulsed Drain to Source Diode Forward Current - - 46 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 0.37 - μC

= 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 250V, ID = 11.5A

V

DD

R

= 25Ω

G

(Note 4 , 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 11.5A - - 1.5 V

SD

= 11.5A

SD

-2150ns

- 134 - ns

FDB12N50F Rev.C0

2

www.fairchildsemi.com

Typical Performance Characteristics

0.1 1 10

0.1

1

10

0.05
20

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

I

D

,Drain Current[A]

VDS,Drain-Source Voltage[V]

30

45678

1

10

150oC

* Notes :

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

,Drain Current[A]

VGS,Gate-Source Voltage[V]

30

0.0 0.5 1.0 1.5 2.0

1

10

100

Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

061218

0.5

0.6

0.7

0.8

0.9

* Note : TJ = 25oC

VGS = 20V

VGS = 10V

R

DS(on)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10

0

500

1000

1500

2000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

30

0 4 8 12 16 20 24

0

2

4

6

8

10

* Note : ID = 11.5A

VDS = 100V
V

DS

= 250V

V

DS

= 400V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDB12N50F N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDB12N50F Rev.C0

3

www.fairchildsemi.com