Fairchild FDB120N10 service manual

tm

FDB120N10

N-Channel PowerTrench® MOSFET

100V, 74A, 12mΩ

FDB120N10 N-Channel PowerTrench

June 2009

Features

•R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

= 9.7mΩ ( Typ.)@ VGS = 10V, ID = 74A

DS(on)

R

DS(on)

G

S

D

D2-PAK

FDB Series

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters / Synchronous Rectification

®

MOSFET

D

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.8 V/ns
P

D

, T

T

J

STG

T

L

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V

Drain Current
Drain Current - Pulsed (Note 1) 296 A

Single Pulsed Avalanche Energy (Note 2) 198 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted

C

- Continuous (T

- Continuous (T

(T

= 25oC) 170 W

C

- Derate above 25

= 25oC) 74

C

= 100oC) 52

C

o

C1.14W/

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

©2009 Fairchild Semiconductor Corporation
FDB120N10 Rev. A

Thermal Resistance, Junction to Case 0.88
Thermal Resistance, Junction to Ambient 62.5

www.fairchildsemi.com1

o

A

o

o

C

o

C

C/W

C

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB120N10 FDB120N10 D2-PAK 330mm 24mm 800

FDB120N10 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 100 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC-0.1-V/

D

V

= 100V, V

DS

= 100V, V

V

DS

= 0V - - 1

GS

= 0V,TC = 150oC - - 500

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.5-4.5V
Static Drain to Source On Resistance VGS = 10V, ID = 74A - 9.7 12 mΩ

V

Forward Transconductance

= 10V , ID = 74A (Note 4)

DS

- 105 - S

Dynamic Characteristics

C
C
C
Q
Q

Q

iss
oss
rss
g(tot)
gs

gd

Input Capacitance
Output Capacitance - 405 540 pF
Reverse Transfer Capacitance - 170 255 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 26 - nC

Gate to Drain “Miller” Charge - 20 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 105 220 ns
Turn-Off Delay Time - 39 88 ns
Turn-Off Fall Time - 15 40 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 80V ID = 74A

DS

V

= 10V

GS

(Note 4, 5)

= 50V, ID = 74A

V

DD

V

= 10V, R

GS

(Note 4, 5)

GEN

= 4.7Ω

- 4215 5605 pF

-6686nC

-2764ns

μA

o

C

®

MOSFET

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.11mH, I
≤ 74A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDB120N10 Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 74 A
Maximum Pulsed Drain to Source Diode Forward Current - - 296 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 67 - nC

= 60A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 74A - - 1.3 V

SD

= 74A

SD

2

-44-ns

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

3000

V

= 15.0 V

GS

10.0 V

1000

8.0 V

7.0 V

6.0 V

5.5 V

100

5.0 V

10

, Drain Current[A]

D

I

1

0.2

0.1 1 10

*Notes:

1. 250

2. T

μs Pulse Test

= 25oC

C

VDS, Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.04

500

100

175oC

10

, Drain Current[A]

D

I

1

3456789

-55oC

25oC

*Notes:

1. V

2. 250

= 10V

DS

μs Pulse Test

VGS, Gate-Source Voltage[V]

500

FDB120N10 N-Channel PowerTrench

®

MOSFET

0.03

[Ω],

0.02

DS(ON)

R

0.01

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

0.00
0 50 100 150 200 250 300

*Note: TC = 25oC

ID, Drain Current [A]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

7000

5600

C

iss

C

= Cgs + Cgd (Cds = shorted

iss

C

= Cds + C

oss

C

rss

= C

gd

gd

)

4200

2800

*Note:

= 0V

1. V

GS

C

oss

2. f = 1MH z

Capacitances [pF]

1400

0

0.1 1 10 30

C

rss

VDS, Drain-Source Volt age [V ]

100

175oC

25oC

10

, Reverse Drain Current [A]

S

I

1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

VSD, Body Diode Forward Voltage [V]

10

VDS = 25V
V

= 50V

DS

V

8

DS

= 80V

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 20406080

*Note: ID =74A

Qg, Total Ga te Charge [n C ]

FDB120N10 Rev. A

3

www.fairchildsemi.com