Fairchild FDB10AN06A0, FDP10AN06A0 service manual

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FDB10AN06A0 / FDP10AN06A0

N-Channel PowerTrench® MOSFET 60V, 75A, 10.5mΩ

FDB10AN06A0 / FDP10AN06A0

July 2002

Features

•r

•Q

• Low Miller Charge

• Low Qrr Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82560

MOSFET Maximum Ratings T

= 9.5mΩ (Typ.), V

DS(ON)

(tot) = 28nC (Typ.), V

g

DRAIN

(FLANGE)

= 10V, ID = 75A

GS

= 10V

GS

TO-220AB

FDP SERIES

DRAIN

GA TE

SOURCE

= 25°C unless otherwise not ed

C

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Syste m s

• DC-DC converter s and Off-line UPS

• Distributed P ower Arc hitectures and VRMs

• Primary Switch for 12V and 24V systems

GATE

G

SOURCE

TO-263AB

FDB SERIES

DRAIN

(FLANGE)

D

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 60 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T

I

D

Continuous (T

= 25oC, VGS = 10V)

C

= 100oC, VGS = 10V) 54 A

C

= 25oC, VGS = 10V) with R

amb

= 43oC/W) 12 A

θJA

75 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 429 mJ Power dissipation 135 W

o

Derate above 25

C0.9W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions an d environment dem anded by the au tomotive industry. For a

All Fairchild Semiconductor products are manufactu red, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction t o Case TO-220, TO-263 1.11 Thermal Resistance Junction t o Ambient T O-220, TO-263 (Note 2) 62 Thermal Resistance Junction to Ambient TO-263, 1 in2 copper pad area 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be fou nd a t: http://ww w.f airc hilds e m i.co m /pr oduc ts/dis c rete/reliab ility/ind ex.html.

certification.

FDB10AN 06A0 / FDP 10AN06A0 Rev. A

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB10AN06A0 FDB10AN06A0 TO- 263AB 330mm 24mm 800 unit s FDP10AN06A0 FDP10AN06A0 TO- 220AB Tube N/A 50 unit s

FDB10AN06A0 / FDP10AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Con ditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

I

= 75A, VGS = 10V - 0.0095 0.0105

D

I

= 37A, VGS = 6V - 0.017 0.027

Drain to S ou r c e On Re si st ance

D

= 75A, VGS = 10V,

I

D

T

= 175oC

J

- 0.021 0.023

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 340 - pF Reverse Transfer Capacitance - 110 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 3.5 4.6 nC Gate to Source Gate Charg e - 11.7 - nC Gate Charge Threshold to Plateau - 8.2 - nC

V

DD

I

= 75A

D

I

= 1.0m A

g

= 30V

Gate to Drain “Miller” Charge - 7.4 - nC

- 1840 - pF

28 37 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 8 - ns Rise Time - 128 - ns Turn-Off D elay Time - 27 - ns Fall Time - 36 - ns Turn-Off Time - - 94 ns

(VGS = 10V)

V

= 30V, ID = 75A

DD

V

= 10V, RGS = 10Ω

GS

--206ns

Drain-Source Diode Characteristics

I

= 75A - - 1.2 5 V

V

SD

t

rr

Q

RR

Notes: 1: Starting T 2: Pulse Width = 100s

Source to Drain Diode Voltage Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -27ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -23nC

= 25°C, L = 8.58mH, IAS = 10A.

J

SD

I

= 40A - - 1.0 V

SD

FDB10AN06A0 / FDP10AN06A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

80

60

40

, DRAIN CURRENT (A)

D

I

20

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

x R

0

θJC

t

1

+ T

t

2

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 10V

, PEAK CURRENT (A)

DM

I

100

70

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

Typical Characteristics T

= 25°C unless otherwise noted

C

FDB10AN06A0 / FDP10AN06A0

500

100

OPERATION IN THIS

10

, DRAIN CURRENT (A)

D

1

I

0.1

AREA MAY BE

LIMITED BY r

SINGLE PULSE TJ = MAX RATED

T

= 25oC

C

110100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

10µs 100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

500

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

150

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

125

V

= 15V

DD

100

75

TJ = 25oC

150

125

100

75

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

STARTING TJ = 150oC

0.1 1 10

tAV, TIME IN AVALANCHE (ms)

Capability

VGS = 10V

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

= 7V

V

GS

VGS = 6V

50

, DRAIN CURRENT (A)

D

I

TJ = 175oC

25

0

45678

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

25

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

20

15

10

DRAIN TO SOURCE ON RESISTANCE(mΩ)

5

0 20406080

VGS = 6V

VGS = 10V

ID, DRAIN CURRENT (A)

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

50

, DRAIN CURRENT (A)

D

I

25

0

01234

2.5

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

TJ, JUNCTION TEMPERATURE (oC)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

TC = 25oC

V

= 5V

GS

VGS = 10V, ID = 75A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature