Fairchild FDB088N08 service manual
FDB088N08
N-Channel PowerTrench® MOSFET
75V, 85A, 8.8mΩ
FDB088N08 N-Channel PowerTrench
February 2010
Features
•R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• 100% Internal Rg Screening for Easy Paralleling Operation
• RoHS Compliant
= 7.3 mΩ ( Typ.)@ VGS = 10V, ID = 75A
DS(on)
R
DS(on)
D
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D
G
D2-PAK
G
S
FDB Series
Absolute Maximum Ratings T
Symbol Parameter FDB088N08 Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
, T
T
J
STG
T
L
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V
Drain Current - Continuous (TC = 25oC, Silicon Limited)
- Continuous (T
- Continuous (T
D r a i n C u r r e n t - P u l s e d (Note 1) 340 A
Single Pulsed Avalanche Energy (Note 2) 309 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted*
C
= 100oC, Silicon Limited)
C
= 25oC, Package Limited)
C
(T
= 25oC) 160 W
C
- Derate above 25
o
C1.06W/
S
85* A
60 A
120 A
300
o
o
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
Thermal Resistance, Junction to Case 0.94
Thermal Resistance, Junction to Ambient 62.5
o
C/W
®
MOSFET
o
C
C
C
©2010 Fairchild Semiconductor Corporation
FDB088N08 Rev. A2
www.fairchildsemi.com1
FDB088N08 N-Channel PowerTrench
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDB088N08
FDB088N08 D2-PAK 330mm 24mm 800
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
R
G
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC75 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
I
= 250μA, Referenced to 25oC - 0.07 - V/oC
D
V
= 75V, V
DS
= 75V, TC = 150oC - - 500
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 7.3 8.8 mΩ
Forward Transconductance VDS = 10V, ID = 37.5A (Note 4) - 300 - S
Input Capacitance
Output Capacitance - 355 470 pF
Reverse Transfer Capacitance - 200 300 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 60V, ID = 75A
Gate to Source Gate Charge - 22 - nC
Gate to Drain “Miller” Charge - 28 - nC
DS
V
= 10V
GS
( Note 4 , 5)
- 4960 6595 pF
- 91 118 nC
Gate Resistance f = 1MHz - - 4 Ω
μA
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 158 326 ns
Turn-Off Delay Time - 244 498 ns
Turn-Off Fall Time - 102 214 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.11mH, I
3. I
≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 85 A
Maximum Pulsed Drain to Source Diode Forward Current - - 340 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 80.7 - nC
= 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 37.5V, ID = 75A
V
DD
R
= 25Ω, VGS = 10V
GEN
(N ote 4, 5)
= 0V, I
GS
= 0V, I
V
GS
dI
/dt = 100A/μs (Note 4)
F
= 75A - - 1.25 V
SD
= 75A
SD
- 45 100 ns
- 41.1 - ns
FDB088N08 Rev. A2
2
www.fairchildsemi.com
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