Fairchild FDB070AN06A0, FDP070AN06A0 service manual

FDB070AN06A0 / FDP070AN06A0

N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ

FDB070AN06A0 / FDP070AN06A0

March 2003

Features

•r

•Q

• Low Miller Charge

•Low Q

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82567

DRAIN

(FLANGE)

MOSFET Maximum Ratings T

= 6.1mΩ (Typ.), V

DS(ON)

(tot) = 51nC (Typ.), V

g

Body Diode

RR

GS

= 10V

GS

TO-2 20 AB

FDP SERIES

= 10V, ID = 80A

SOURCE

DRAIN

GATE

= 25°C unless otherwise noted

C

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 12V and 24V systems

GATE

SOURCE

TO-2 63 AB

FDB SERIES

DRAIN

(FLANGE)

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current

I

D

Continuous (T

< 97oC, VGS = 10V)

C

= 25oC, VGS = 10V, R

A

= 43oC/W) 15 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 190 mJ

Power dissipation 175 W

o

Derate above 25

C1.17W/

Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

Thermal Resistance Junction to Case TO-220,TO-263 0.86

Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) 62

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

certification.

FDB070AN06A0 / FDP070AN06A0 Rev. B

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB070AN06A0 FDB070AN06A0 TO-263AB 330mm 24mm 800 units

FDP070AN06A0 FDP070AN06A0 TO-220AB Tube N/A 50 units

FDB070AN06A0 / FDP070AN06A0

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V

V

= 50V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

= 80A, VGS = 10V - 0.0061 0.007

I

Drain to Source On Resistance

D

I

= 80A, VGS = 10V,

D

T

= 175oC

J

- 0.0127 0.015

Dynamic Characteristics

C

Q

ISS

OSS

RSS

g(TOT)

g(TH)

gs

gs2

gd

Input Capacitance

Output Capacitance - 510 - pF

Reverse Transfer Capacitance - 230 - pF

Total Gate Charge at 10V VGS = 0V to 10V

Threshold Gate Charge VGS = 0V to 2V - 5.4 7 nC

Gate to Source Gate Charge - 17 - nC

Gate Charge Threshold to Plateau - 11.6 - nC

Gate to Drain “Miller” Charge - 16 - nC

Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 12 - ns

Rise Time - 159 - ns

Turn-Off Delay Time - 27 - ns

Fall Time - 35 - n s

Turn-Off Time - - 93 ns

GS

= 10V)

= 25V, VGS = 0V,

V

DS

f = 1MHz

V

= 30V, ID = 80A

DD

V

= 10V, RGS = 5.6Ω

GS

V

DD

I

= 80A

D

I

= 1.0mA

g

= 30V

- 3000 - pF

51 66 nC

--256ns

µA

Ω

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 93µH, IAS = 64A. 2: Pulse width = 100s.

Source to Drain Diode Voltage

Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- - 34ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- - 35nC

SD

= 40A - - 1.0 V

I

SD

FDB070AN06A0 / FDP070AN06A0

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PUL SE

-4

10

120

100

80

60

40

, DRAIN CURRENT (A)

D

I

20

150

0

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Current vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z

-1

10

θJC

10

0

x R

t

1

t

2

+ T

θJC

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

2000

1000

VGS = 10V

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

100

50

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

FDB070AN06A0 / FDP070AN06A0

Typical Characteristics T

1000

100

OPERATION IN THIS

10

AREA MAY BE

LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

SINGLE PUL SE TJ = MAX RATED

TC = 25oC

0.1 110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 25°C unless otherwise noted

C

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

160

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

120

500

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/ R)ln[(IAS*R)/(1.3*RATED BV

t

AV

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Not es AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

160

VGS = 10V

120

VGS = 7V

80

, DRAIN CURRENT (A)

D

I

TJ = 25oC

40

TJ = 175oC

0

4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

80

, DRAIN CURRENT (A)

D

I

40

VGS = 5V

0

00.51.01.52.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

16

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

14

12

10

8

DRAIN TO SOURCE ON RESISTANCE(mΩ)

6

0 20406080

VGS = 6V

VGS = 10V

ID, DRAIN CURRENT (A)

2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 6V

TC = 25oC

VGS = 10V, ID =80A

Figure 9. Drain to Source On Resistance vs Drain

Current

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature