Fairchild FDB060AN08A0, FDP060AN08A0 service manual

FDB060AN08A0 / FDP060AN08A0

N-Channel PowerTrench® MOSFET 75V, 80A, 6.0mΩ

FDB060AN08A0 / FDP060AN08A0

November 2002

Features

•r

•Q

• Low Miller Charge

•Low Q

= 4.8mΩ (Typ .), V

DS(ON)

(tot) = 73nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 80A

GS

= 10V

GS

Applications

• Elec tr on ic Valve Train Sys te m s

• DC-DC converters and Off -line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V systems

• UIS Capability (Single Pulse and Repetitive Pulse)

Formerly developmental type 82680

DRAIN

(FLANGE)

GATE

TO-220AB

FDP SERIES

MOSFET Maximum Ratings

SOURCE

DRAIN

GATE

SOURCE

TO-263AB

FDB SERIES

TC = 25°C unless otherwise noted

DRAIN

(FLANGE)

D

G

S

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Sou r c e Voltage 75 V Gate to Source Voltage ±20 V Drain Curr e nt

I

D

Continuous (T Continuous (T

< 127oC, VGS = 10V)

C

= 25oC, VGS = 10V, with R

amb

= 43oC/W) 16 A

θJA

80 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 350 mJ Power dissipation 255 W Derate above 25oC1.7W/ Operating and Storage Temperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-220,TO-263 0.58 Thermal Resistance Junction to Ambien t TO-220,TO -263 (Note 2) 62 Thermal Resistan ce Junction to Ambient TO-263, 1in2 copper pad ar ea 43

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB060 AN08A0 FDB060AN08A0 TO-263AB 330mm 24mm 800 uni ts FDP060AN08A0 FDP060AN08A0 TO-220AB Tube N/A 50 unit s

FDB060AN08A0 / FDP060AN08A0

Electrical Characteristics

TC = 25°C unless othe rw ise noted

Symbol Parame ter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain to Sou r c e Br ea k down Voltag e ID = 250µA, VGS = 0V 75 - - V

V

= 60V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- -250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

ID = 80A, VGS = 10V - 0.0048 0.006 I

= 40A, VGS = 6V - 0.0066 0.010

Drain to S ou r c e On Re si st ance

D

= 80A, VGS = 10V,

I

D

T

= 175oC

J

- 0.010 0.013

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 800 - pF Reverse Transfer Capacitance - 230 - pF

V

= 25V, VGS = 0V,

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 10 13 nC Gate to Source Gate Charg e - 2 9 - nC Gate Charge Threshold to Plateau - 19 - nC

VDD = 40V

= 80A

I

D

I

= 1.0m A

g

- 5150 - pF

73 95 nC

Gate to Drain “Miller” Charge - 16 - nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 19 - ns Rise Time - 79 - ns Turn-Off Delay Time - 37 - ns Fall Time - 38 - ns Turn-Off Time - - 113 ns

(VGS = 10V)

Drain-Source Diode Characteristics

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 109µH, IAS = 80A. 2: Pulse width = 100s

Source to Drain Diode V oltage Reverse Recovery Time ISD = 75A, dISD/dt = 100A/µs- -37ns

Reverse Recovered Charge ISD = 75A, dISD/dt = 100A/µs- -38nC

--147ns

VDD = 40V, ID = 80A VGS = 10V, RGS = 3.9Ω

I

= 80A - - 1.25 V

SD

= 40A - - 1.0 V

I

SD

FDB060AN08A0 / FDP060AN08A0

Typical Characteristics

TC = 25°C unless othe rw ise noted

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 175

125

TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

150

125

100

75

50

, DRAIN CURRENT (A)

D

I

25

0

150

25 50 75 100 125 150 175

Figure 2. Maximum Continuous Drain Curr ent vs

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

CURRENT LIMITED BY PACKAGE

TC, CASE TEMPERATURE (oC)

Case Temperature

P

DM

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

θJC

10

0

x R

t

1

t

2

+ T

θJC

C

1

10

Figure 3. Normalized Maximum Transient Thermal Impedance

2000

TRANSCONDUCTANCE

1000

MAY LIMIT CURRENT IN THIS REGION

VGS = 10V

, PEAK CURRENT (A)

DM

I

100

70

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

FDB060AN08A0 / FDP060AN08A0

Typical Characteristics

1000

100

OPERATION IN THIS

10

, DRAIN CURRENT (A)

D

I

0.1

AREA MAY BE

LIMITED BY r

1

SINGLE PULSE

TJ = MAX RATED TC = 25oC

110100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25°C unless othe rw ise noted

10µs

100µs

1ms

10ms

DC

Figure 5. Forward Bias Safe Operating Area

175

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

150

125

= 15V

V

DD

500

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

STARTING TJ = 25oC

- VDD) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

175

150

125

VGS = 10V

V

= 7V

GS

VGS = 6V

100

75

, DRAIN CURRENT (A)

50

D

I

25

TJ = 25oC

0

3.5 4.0 4.5 5.0 5.5 6.0 VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 175oC

TJ = -55oC

100

75

, DRAIN CURRENT (A)

50

D

I

25

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

7.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

7.0

6.5

6.0

5.5

5.0

4.5

DRAIN TO SOURCE ON RESISTANCE(mΩ)

4.0 0 20406080

VGS = 6V

VGS = 10V

ID, DRAIN CURRENT (A)

2.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 5V

VGS = 10V, ID = 80A

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature