Fairchild FDB047N10 service manual
FDB047N10
N-Channel PowerTrench® MOSFET
100V, 164A, 4.7mW
FDB047N10 N-Channel PowerTrench
February 2012
Description
• R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handing capability
• RoHS compliant
= 3.9mW ( Typ.) @ VGS = 10V, ID = 75A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet maintain
superior switching performance.
Application
• DC to DC converters / Synchronous Rectification
D
D
G
G S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
TJ, T
STG
T
L
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current - Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
Drain Current - Pulsed (Note 1) 656* A
Single Pulsed Avalanche Energy (Note 2) 1153 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
D2-PAK
FDB Series
= 25oC unless otherwise noted*
C
(TC = 25oC) 375 W
- Derate above 25oC 2.5 W/oC
S
164* A
116* A
120 A
300
o
o
Thermal Characteristics
Symbol Parameter Ratings Units
R
qJC
R
qJA
Thermal Resistance, Junction to Case 0.4
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper) 62.5
Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper) 40
o
C/W
®
MOSFET
C
C
©2012 Fairchild Semiconductor Corporation
FDB047N10 Rev. C0
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB047N10 FDB047N10 D2-PAK
330mm
24mm 800
FDB047N10 N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DBV
DT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250mA, VGS = 0V, TJ = 25oC 100 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
ID = 250mA, Referenced to 25oC - 0.1 - V/oC
VDS = 100V, V
VDS = 100V, V
= 0V - - 1
GS
= 0V, TC = 150oC - - 500
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250mA 2.5 3.5 4.5 V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.9 4.7 mW
Forward Transconductance VDS = 10V, ID = 75A (Note 4) - 170 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance - 1120 1500 pF
Reverse Transfer Capacitance - 455 680 pF
VDS = 25V, VGS = 0V
f = 1MHz
- 11500 15265 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(tot)
gs
gd
Turn-On Delay Time
Turn-On Rise Time - 386 782 ns
Turn-Off Delay Time - 344 698 ns
Turn-Off Fall Time - 244 499 ns
Total Gate Charge at 10V
Gate to Source Gate Charge - 56 - nC
Gate to Drain “Miller” Charge - 36 - nC
VDD = 50V, ID = 75A
VGS = 10V, R
(Note 4, 5)
GEN
= 25W
VDS = 80V, ID = 75A
VGS = 10V
(Note 4, 5)
- 174 358 ns
- 160 210 nC
mA
®
MOSFET
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25W, Starting TJ = 25°C
3. ISD £ 75A, di/dt £ 200A/ms, VDD £ BV
4. Pulse Test: Pulse width £ 300ms, Duty Cycle £ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDB047N10 Rev. C0
Maximum Continuous Drain to Source Diode Forward Current - - 164* A
Maximum Pulsed Drain to Source Diode Forward Current - - 656 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 245 - nC
, Starting TJ = 25°C
DSS
= 0V, I
GS
VGS = 0V, I
= 75A - - 1.25 V
SD
= 75A
SD
dIF/dt = 100A/ms (Note 4)
2
- 88 - ns
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Typical Performance Characteristics
Capacitances [pF]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
300
100
10V
7V
8V
6.5 V
6.0 V
5.5 V
,Drain Current[A]
D
I
10
6
0.1 1
VDS,Drain-Source Voltage[V]
V
= 5V
GS
*Notes:
1. 250ms Pulse Test
2. TC = 25oC
5
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
10
400
100
175oC
-55oC
25oC
10
,Drain Current[A]
D
I
*Notes:
1. VDS = 20V
1
2 4 6 8
2. 250ms Pulse Test
VGS,Gate-Source Voltage[V]
300
FDB047N10 N-Channel PowerTrench
®
MOSFET
8
100
175oC
6
[mW],
4
DS(ON)
R
VGS = 10V
VGS = 20V
2
Drain-Source On-Resistance
0
0 100 200 300 400
*Note: TJ = 25oC
ID, Drain Current [A]
10
, Reverse Drain Current [A]
S
I
2
0.0 0.5 1.0
VSD, Body Diode Forward Voltage [V]
25oC
*Notes:
1. VGS = 0V
2. 250ms Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
16000
14000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
iss
C
= C
rss
gd
12000
10000
8000
C
oss
6000
4000
C
2000
0
0.1 1 10
rss
VDS, Drain-Source Voltage [V]
gd
*Note:
1. VGS = 0V
2. f = 1MHz
30
10
VDS = 20V
8
VDS = 50V
VDS = 80V
6
4
, Gate-Source Voltage [V]
GS
V
2
0
0 30 60 90 120 150 180
*Note: ID = 75A
Qg, Total Gate Charge [nC]
1.4
FDB047N10 Rev. C0
3
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