Fairchild FDB039N06 service manual
FDB039N06
D
G
S
G
S
D
N-Channel PowerTrench® MOSFET
60V, 174A, 3.9mΩ
FDB039N06 N-Channel PowerTrench
July 2009
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
MOSFET Maximum Ratings
= 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A
DS(on)
R
DS(on)
TC = 25oC unless otherwise noted
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
®
MOSFET
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
P
D
TJ, T
STG
T
L
*
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
-Continuous (TC = 25oC, Silicion Limited) 174*
Drain Current
-Continuous (TC = 25oC, Package Limited) 120
Drain Current - Pulsed (Note 1) 696 A
Single Pulsed Avalanche Energy (Note 2) 872 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(TC = 25oC) 231 W
- Derate above 25oC 1.54 W/oC
300
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
R
θJA
©2009 Fairchild Semiconductor Corporation
FDB039N06 Rev. A
Thermal Resistance, Junction to Case 0.65
Thermal Resistance, Junction to Ambient 62.5
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o
A-Continuous (TC = 100oC, Silicion Limited) 123*
o
C
o
C
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB039N06 FDB039N06 TO-263 Tube - 50
FDB039N06 N-Channel PowerTrench
Electrical Characteristics
TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC= 25oC 60 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
ID = 250µA, Referenced to 25oC - 0.04 - V/oC
VDS = 60V, V
VDS = 60V, V
= 0V - - 1
GS
= 0V, TC = 150oC - - 500
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.5 4.5 V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 2.95 3.9 mΩ
Forward Transconductance VDS = 10V, ID = 75A
(Note 4)
- 169 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance - 900 1195 pF
Reverse Transfer Capacitance - 385 580 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 32 - nC
Gate to Drain “Miller” Charge - 32 - nC
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 48V, ID = 75A
VGS = 10V
(Note 4, 5)
- 6190 8235 pF
- 102 133 nC
Turn-On Delay Time
Turn-On Rise Time - 40 90 ns
Turn-Off Delay Time - 55 120 ns
Turn-Off Fall Time - 24 58 ns
VDD = 30V, ID = 75A
VGS = 10V, R
(Note 4, 5)
GEN
= 4.7Ω
- 30 70 ns
µA
®
MOSFET
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.31mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDB039N06 Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 174 A
Maximum Pulsed Drain to Source Diode Forward Current - - 696 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 47 - nC
, Starting TJ = 25°C
DSS
= 0V, I
GS
VGS = 0V, I
= 75A - - 1.3 V
SD
= 75A
SD
dIF/dt = 100A/µs
2
- 41 - ns
(Note 4)
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Typical Performance Characteristics
2 3 4 5 6 7 8
1
10
100
1000
-55oC
175oC
*Notes:
1. VDS = 10V
2. 250
µµµµ
s Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
0.01 0.1 1
0.1
1
10
100
1000
*Notes:
1. 250
µµµµ
s Pulse Test
2. TC = 25oC
V
GS
=
15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
6
0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
*Notes:
1. VGS = 0V
2. 250
µµµµ
s Pulse Test
175oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 60 120 180 240 300 360
2.4
2.8
3.2
3.6
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[
m
Ω
Ω
Ω
Ω
]
,
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10
100
1000
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted
)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0 20 40 60 80 100 120
0
2
4
6
8
10
*Note: ID = 75A
VDS = 12V
VDS = 30V
VDS = 48V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDB039N06 N-Channel PowerTrench
®
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDB039N06 Rev. A
3
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