Fairchild FDB031N08 service manual

tm

FDB031N08

N-Channel PowerTrench® MOSFET

75V, 235A, 3.1mΩ

FDB031N08 N-Channel PowerTrench

July 2008

Features

•R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

• RoHS compliant

= 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

GS

D

D2-PAK

FDB Series

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s adcanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

DS(on)

Application

• DC to DC convertors / Synchronous Rectification

®

MOSFET

D

G

S

MOSFET Maximum Ratings T

Symbol Parameter FDB031N08 Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
P

D

, T

T

J

STG

T

L

*Calculated continuous current based on maximum allowable junction te mperature. Package limitation current is 120A.

Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V

Drain Current - Continuous (TC = 25oC, Silicon Limited)

- Continuous (T

- Continuous (T
Drain Current - Pulsed (Note 1) 940 A

Single Pulsed Avalanche Energy (Note 2) 1995 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

235* A

= 100oC, Silicon Limited)

C

= 25oC, Package Limited)

C

(T

= 25oC) 375 W

C

- Derate above 25

o

C2.5W/

165* A

120 A

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

©2008 Fairchild Semiconductor Corporation
FDB031N08 Rev. A3

Thermal Resistance, Junction to Case 0.4
Thermal Resistance, Junction to Ambient 62.5

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o

C/W

o

C

o

C

o

C

FDB031N08 N-Channel PowerTrench

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDB031N08

FDB031N08 D2-PAK

330mm

24mm 800

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC75 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250µA, Referenced to 25oC - 0.05 - V/oC

D

V

= 75V, V

DS

= 75V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.53.54.5V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 2.4 3.1 mΩ
Forward Transconductance VDS = 10V, ID = 75A (Note 4) - 180 - S

Input Capacitance
Output Capacitance - 1360 1810 pF
Reverse Transfer Capacitance - 595 800 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 60V, ID = 75A

Gate to Source Gate Charge - 60 - nC
Gate to Drain “Miller” Charge - 47 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 11400 15160 pF

- 169 220 nC

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 191 392 ns
Turn-Off Delay Time - 335 680 ns
Turn-Off Fall Time - 121 252 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 235 A
Maximum Pulsed Drain to Source Diode Forward Current - - 940 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 77 - nC

, Starting TJ = 25°C

DSS

= 37.5V, ID = 75A

V

DD

R

= 25Ω, VGS = 10V

GEN

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 75A - - 1.3 V

SD

= 75A

SD

- 230 470 ns

-53-ns

FDB031N08 Rev. A3

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

3000

V

= 15.0 V

GS

10.0 V

1000

8.0 V

7.0 V

6.5 V

6.0 V

100

5.5 V

5.0 V

10

,Drain Current[A]

D

I

1

0.1

0.01 0.1 1

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.0030

500

100

175oC

10

,Drain Current[A]

D

I

1

2468

-55oC

25oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

VGS,Gate-Source Voltage[V]

400

FDB031N08 N-Channel PowerTrench

®

MOSFET

100

VGS = 10V

175oC

[Ω],

DS(ON)

R

0.0025

VGS = 20V

Drain-Source On-Resistance

0.0020
0 100 200 300 400

*Note: TC = 25oC

ID, Drain Current [A]

10

, Reverse Drain Current [A]

S

I

1

0.0 0.5 1.0 1.5

VSD, Body Diode Forward Voltage [V ]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Capacitances [pF]

100000

10000

1000

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

C

rss

C

iss

C

oss

C

rss

= C

gd

gd

*Note:

1. V

= 0V

GS

2. f = 1MHz

10

VDS = 15V

= 37.5V

V

8

DS

= 60V

V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

25oC

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

100

FDB031N08 Rev. A3

0.1 1 10
VDS, Drain-Source Voltage [V]

0

80

0 50 100 150 200

Qg, Total Ga te C harge [nC]

3

*Note: ID = 75A

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