Fairchild FDB024N06 service manual

tm

FDB024N06

N-Channel PowerTrench® MOSFET

60V, 265A, 2.4mΩ

FDB024N06 N-Channel PowerTrench

July 2008

Features

•R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

• RoHS compliant

= 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC convertors / Synchronous Rectification

D

D

G

GS

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns
P

D

, T

T

J

STG

T

L

*

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V

Drain Current - Continuous (TC = 25oC, Silicon Limited)

- Continuous (T

- Continuous (T
Drain Current - Pulsed (Note 1) 1060 A

Single Pulsed Avalanche Energy (Note 2) 2531 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

D2-PAK

FDB Series

= 25

C

(T

- Derate above 25

S

o

C unless otherwise noted

265* A

= 100oC, Silicon Limited)

C

= 25oC, Package Limited)

C

= 25oC) 395 W

C

o

C2.6W/

190* A

120 A

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 0.38
Thermal Resistance, Junction to Ambient 62.5

o

o

o

C

o

C

C/W

®

MOSFET

C

©2008 Fairchild Semiconductor Corporation
FDB024N06 Rev. A3

www.fairchildsemi.com1

FDB024N06 N-Channel PowerTrench

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDB024N06 FDB024N06 D2-PAK

330mm

24mm 800

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC= 25oC60 - -V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250µA, Referenced to 25oC - 0.04 - V/oC

D

V

DS

V

DS

= 60V, V
= 60V, V

= 0V - - 1

GS

= 0V, TC = 150oC - - 500

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.53.54.5V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 1.8 2.4 mΩ
Forward Transconductance VDS = 10V , ID = 75A (Note 4) - 200 - S

Input Capacitance
Output Capacitance - 1610 2140 pF
Reverse Transfer Capacitance - 750 1125 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 48V, ID = 75A

Gate to Source Gate Charge - 54 - nC
Gate to Drain “Miller” Charge - 50 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 11190 14885 pF

- 174 226 nC

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 324 658 ns
Turn-Off Delay Time - 348 706 ns
Turn-Off Fall Time - 250 510 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.9mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 265 A
Maximum Pulsed Drain to Source Diode Forward Current - - 1060 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 152 - nC

, Starting TJ = 25°C

DSS

= 30V, ID = 75A

V

DD

V

= 10V, R

GS

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 25Ω

GEN

= 75A - - 1.3 V

SD

= 75A

SD

- 134 278 ns

-69-ns

FDB024N06 Rev. A3

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

700

V

= 15.0 V

GS

10.0 V

8.0 V

7.0 V

100

6.5 V

6.0 V

5.5 V

5.0 V

,Drain Current[A]

10

D

I

*Notes:

1. 250

µs Pulse Test

= 25oC

2. T

1

0.01 0.1 1

VDS,Drain-Source Voltage[V]

C

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

3.0

1000

*Notes:

= 20V

1. V

DS

µs Pulse Test

2. 250

100

,Drain Current[A]

10

D

I

1

234567

175oC

25oC

-55oC

VGS,Gate-Source Voltage[V]

500

FDB024N06 N-Channel PowerTrench

®

MOSFET

2.5

VGS = 10V

2.0

[mΩ],

DS(ON)

R

VGS = 20V

1.5

Drain-Source On-Resistance

1.0
0 100 200 300 400

*Note: TC = 25oC

ID, Drain Current [A]

100

10

, Reverse Drain Current [A]

S

I

1

0.00.20.40.60.81.01.21.4

175oC

25oC

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

VSD, Body Diode Forward Voltage [V ]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

16000

C

iss

12000

C

8000

Capacitances [pF]

4000

0

oss

C

rss

0.1 1 10

C
C
C

VDS, Drain-Source Voltage [V]

*Note:

1. V

2. f = 1MHz

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss
rss

= C

gd

gd

= 0V

GS

60

10

VDS = 15V
V

= 30V

8

DS

= 48V

V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

*Note: ID = 75A

0

0 40 80 120 160 200

Qg, Total Ga te C harge [nC]

FDB024N06 Rev. A3

3

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