Fairchild FDA8440 service manual
March 2008
FDA8440 N-Channel PowerTrench
FDA8440
N-Channel PowerTrench
40V, 100A, 2.1mΩ
Features
•R
•Q
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single P
• 160A Guarantee for 2 sec
•RoHS Compliant
= 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A
DS(on)
= 345nC (Typ.)@ VGS = 10V
g(tot)
ulse and Re
petitive Pulse)
®
MOSFET
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V systems
tm
®
MOSFET
D
G
TO-3PN
GSD
MOSFET Maximum Ratings
TC = 25oC unless otherwise noted
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
E
AS
P
D
T
J, TSTG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current
- Continuous (T
- Continuous (T
- Pulsed
Single Pulsed Avalanche Energy (Note 1) 1682 mJ
Power dissipation 306 W
Derate above 25
Operating and Storage Temperature -55 to +175
= 155oC)
C
= 25oC, VGS = 10V, R
A
o
C 2.04 W/oC
= 40oC/W )
θJA
100
30
500
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 0.49
Thermal Resistance, Junction to Ambient (Note 2) 40
o
C/W
o
C/W
A
A
A
o
C
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDA8440 Rev. A2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape W idth Quantity
FDA8440 FDA8440 TO-3PN N/A N/A 30units
FDA8440 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(tot)
Q
g(2)
Q
gs
Q
gs2
Q
gd
Switching Characteristics
t
ON
t
d(on)
t
r
t
d(off)
t
f
t
OFF
Drain-Source Diode Characteristics and Maximum Ratings
V
SD
t
rr
Q
RR
Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA 40 -- -- V
Zero Gate Voltage Drain Current
V
= 32V
DS
= 0 V
V
GS
= 150oC -- -- 250 μA
T
C
-- -- 1 μA
Gate to Body Leakage Current VGS = ±20V -- -- ±100 nA
Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 1 -- 3 V
V
= 4.5V, ID = 80A -- 1.56 2.2
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance -- 1840 2450 pF
Reverse Transfer Capacitance -- 1400 2100 pF
GS
V
= 10V, ID = 80A -- 1.46 2.1
GS
= 10V, ID = 80A,
V
GS
= 175oC
T
C
-- 2.82 4.1
-- 18600 24740 pF
V
= 25V, VGS = 0V,
DS
f = 1.0MHz
mΩ
Gate Resistance VGS = 0.5V, f = 1MHz -- 1.1 -- Ω
Total Gate Charge at 10V VGS = 0V to 10V
= 20V
Threshold Gate Charge VGS = 0V to 2V -- 32.5 -- nC
Gate to Source Gate Charge -- 49 -- nC
Gate Charge Threshold to Plateau -- 16.5 -- nC
V
DD
I
= 80A
D
= 1.0mA
I
g
-- 345 450 nC
Gate to Drain “Miller” Charge -- 74 -- nC
(V
= 10V)
GS
Turn-On Time
Turn-On Dela y Time -- 43 95 ns
Rise Time -- 130 275 ns
= 20V,ID = 80A
V
DD
V
GS
= 10V, R
GEN
= 7Ω
-- 175 360 ns
Turn-Off Delay Time -- 435 875 ns
Fall Time -- 290 590 ns
Turn-Off Ti me -- 730 1470 ns
I
= 80A -- -- 1.25 V
Source to Drain Diode Voltage
SD
= 40A -- -- 1.0 V
I
SD
Reverse Recovery Time ISD = 75A, dISD/dt = 100A/μs -- 59 -- ns
Reverse Recovery Charge ISD = 75A, dISD/dt = 100A/μs -- 77 -- nC
®
MOSFET
NOTES:
1: Starting T
2: Pulse width = 100s
= 25°C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V.
J
FDA8440 Rev. A2
2 www.fairchildsemi.com
Typical Performance Characteristics
0246
1
10
100
-55oC
150oC
* Notes :
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
400
0.1 1
1
10
100
0.4
* Notes :
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 10.0 V
7.0 V
5.0 V
3.5 V
3.0 V
2.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.04
400
0.3 0.6 0.9 1.2
1
10
100
1000
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
Notes:
1. V
GS
= 0V
2. 250
μs Pulse Test
0 50 100 150 200 250
1.45
1.50
1.55
1.60
* Note : TJ = 25oC
VGS = 4.5V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
10
-1
10
0
10
1
0
6000
12000
18000
24000
30000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
20
0 100 200 300 400
0
2
4
6
8
10
* Note : ID = 80A
VDS = 25V
V
DS
= 20V
V
DS
= 15V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Vol
and Temperatue
ge Variation vs. Source Current
ta
FDA8440 N-Channel PowerTrench
®
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDA8440 Rev. A2
3 www.fairchildsemi.com
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