Fairchild FDA70N20 service manual

FDA70N20

200V N-Channel MOSFET

FDA70N20 200V N-Channel MOSFET

TM

UniFET

Features

• 70A, 200V, R

• Low gate charge ( typical 66 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 89 pF)

rss

= 0.035Ω @VGS = 10 V

DS(on)

GSD

TO-3PN

FDA Series

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switched mode power supplies and active power factor
correction.

D

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z

z



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z

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G

z
z

z

{

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S

Absolute Maximum Ratings

Symbol Parameter FDA70N20 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain-Source Voltage 200 V

Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 70 A

Repetitive Avalanche Energy (Note 1) 41.7 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

70
45

280 A

1742 mJ

417

3.3

300 °C

A
A

W

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDA70N20 Rev. A

Thermal Resistance, Junction-to-Case -- 0.3 °C/W

Thermal Resistance, Case-to-Sink 0.24 -- °C/W

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA70N20 FDA70N20 TO-3PN - - 30

FDA70N20 200V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 200 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.2--V/°C

D

= 160V, TC = 125°C

V

DS

--

--

--

--

1

10

µA
µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V

Static Drain-Source
On-Resistance

Forward Transconductance VDS = 40V, ID = 35A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 750 980 pF

= 10V, ID = 35A -- 0.029 0.035 Ω

V

GS

(Note 4)

-- 47 -- S

-- 3050 3970 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 89 130 pF

Turn-O n Delay Time VDD = 100V, ID = 70A

= 25Ω

R

Turn-On Rise Time -- 235 480 ns

G

-- 71 150 ns

Turn-Off Delay Time -- 65 140 ns

Turn-Off Fall Time -- 39 88 ns

Total Gate Charge VDS = 160V, ID = 70A

V

= 10V

Gate-Source Charge -- 19 -- nC

GS

Gate-Drain Charge -- 26 -- nC

(Note 4, 5)

-- 66 86 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 70 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 280 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 70A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 70A

/dt =100A/µs (Note 4)

dI

Reverse Recovery Charge -- 4.1 -- µC

F

-- 175 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.533mH, IAS = 70A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 70A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDA70N20 Rev. A

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Typical Performance Characteristics

FDA70N20 200V N-Channel MOSFET

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

, Drain Current [A]
I

2

10

1

10

D

0

10

10

V
Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V
Bottom : 6.0 V

-1

GS

0

10

VDS, Drain-Source Voltage [V]

2

10

150oC

Notes :※

1. 250µ s Pulse Test

2. T

= 25℃

C

1

10

1

10

, Drain Current [A]

D

I

0

10

24681012

25oC

VGS, Gate-Source Voltage [V]

-55oC

Notes :※

1. VDS = 40V

2. 250µ s Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.06

0.05

VGS = 10V

0.04

VGS = 20V

[Ω ],Drain-Source On-Resistance

0.03

DS(ON)

R

0 25 50 75 100 125 150 175 200

Note : T※J = 25℃

ID, Drain Current [A]

2

10

1

10

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1. 6 1.8

150℃

VSD, Source-Drain voltage [V]

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

8000

6000

4000

Capacitances [pF]

2000

0

-1

10

FDA70N20 Rev. A

C

oss

C

iss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

Note ;※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040506070

VDS = 40V

VDS = 100V

VDS = 160V

Note : I※D = 70A

QG, Total Gate Charge [nC]

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