Fairchild FDA69N25 service manual

FDA69N25

250V N-Channel MOSFET

FDA69N25 250V N-Channel MOSFET

May 2006

TM

UniFET

Features

• 69A, 250V, R

• Low gate charge ( typical 77 nC)

• Low Crss ( typical 84pF)

•Fast switching

• Improved dv/dt capability

= 0.041Ω @VGS = 10 V

DS(on)

GSD

TO-3PN

FDA Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FDA69N25 Units

V

DSS

V

DS(Avalanche)

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

, T

T

J

STG

T

L

Drain-Source Voltage 250 V
Repetitive Avalanche Voltage

Drain Current - Continuous (TC = 25°C) 69 A

- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 480 W

- Derate above 25°C 3.84 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 44.2 A

C

(Note 1)
(Note 2)

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

300 V

276 A

1894 mJ

69 A
48 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FDA69N25 Units

R

θJC

R

θJA

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDA69N25 Rev. A

Thermal Resistance, Junction-to-Case 0.26 °C/W
Thermal Resistance, Junction-to-Ambient 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA69N25 FDA69N25 TO-3PN -- -- 30

FDA69N25 250V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics
V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics
C

iss

C

oss

C

rss

Switching Characteristics
t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings
I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.64mH, IAS =69A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 69A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temp er ature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 250 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.25 -- V/°C
Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 1 µA

= 200 V, TC = 125°C -- -- 10 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 34.5 A -- 0.034 0.041 Ω
Forward Transconductance VDS = 40 V, ID = 34.5 A (Note 4) -- 25 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 750 980 pF

f = 1.0 MHz

-- 3570 4640 pF

Reverse Transfer Capacitance -- 84 130 pF

Turn-On Delay Time VDD = 125 V, ID = 69A,

= 25 Ω

R

Turn-On Rise Time -­Turn-Off Delay Time -­Turn-Off Fall Time --

G

(Note 4, 5)

Total Gate Charge VDS = 200 V, ID = 69A,

= 10 V

V

Gate-Source Charge -­Gate-Drain Charge --

GS

(Note 4, 5)

--

--

95 200
855 1720
130 270
220 450

77 100

24

37

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 34 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 136 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 69 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 69 A,

/ dt = 100 A/µs (Note 4)

dI

Reverse Recovery Charge -- 5.7 --

Starting TJ = 25°C

DSS,

F

-- 210 -- ns

ns
ns
ns
ns

nC

µC

FDA69N25 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V

GS

Top : 15.0 V

10.0 V

, Drain Current [A]
I

10

10

D

10

2

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5 .5 V

1

0

-1

10

0

10

VDS, Drain-Source Voltage [V]

* Notes :

1. 250

2. T

10

1

µs Pulse Test

= 25°C

C

2

10

150°C

25°C

1

10

, Drain Current [A]

D

I

0

10

24681012

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.10

-55°C

* Notes :

1. V

2. 250

DS

= 40V

µs Pulse Test

FDA69N25 250V N-Channel MOSFET

2

10

0.08

0.06

VGS = 10V

VGS = 20V

[Ω], Drain-Source On-Resistance

0.04

DS(ON)

R

0 25 50 75 100 125 150 175 200

* Note : TJ = 25°C

ID, Drain Current [A]

1

10

150°C

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

25°C

* Notes :

1. V

2. 250

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

9000

6000

3000

Capacitances [pF]

0

-1

10

C

oss

C

iss

C

rss

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

* Note ;

= 0 V

1. V

GS

2. f = 1 MHz

0

10

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050607080

VDS = 50V

VDS = 125V

VDS = 200V

* Note : ID = 69A

QG, Total Gate Charge [nC]

= 0V

GS

µs Pulse Test

FDA69N25 Rev. A

3 www.fairchildsemi.com