Fairchild FDA59N30 service manual
FDA59N30
300V N-Channel MOSFET
FDA59N30 300V N-Channel MOSFET
TM
UniFET
Features
• 59A, 300V, R
• Low gate charge ( typical 77 nC)
• Low C
( typical 80 pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.056Ω @V
DS(on)
GS
= 10 V
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
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S
GSD
TO-3PN
FDA Series
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G
Absolute Maximum Ratings
Symbol Parameter FDA59N30 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 300 V
Drain Current - Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
59
35
236 A
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (T
= 25°C)
C
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1734 mJ
59 A
50 mJ
4.5 V/ns
500
4
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300 °C
A
A
W
W/°C
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
θCS
R
θJA
©2005 Fairchild Semiconductor Corporation
FDA59N30 Rev. A
Thermal Resistance, Junction-to-Case -- 0.25 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
1
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDA59N30 FDA59N30 TO-3PN - - 30
FDA59N30 300V N-Channel MOSFET
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage VGS = 0V, I
Breakdown Voltage Temperature
DSS
J
Coefficient
= 250µA, Referenced to 25°C--0.3--V/°C
I
D
Zero Gate Voltage Drain Current VDS = 300V, VGS = 0V
V
DS
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VDS = VGS, I
Static Drain-Source
On-Resistance
V
GS
Forward Transconductance VDS = 40V, ID = 29.5A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 710 920 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 80 120 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time VDD = 150V, ID = 59A
= 25Ω
R
Turn-On Rise Time -- 575 1160 ns
G
Turn-Off Delay Time -- 120 250 ns
Turn-Off Fall Time -- 200 410 ns
Total Gate Charge VDS = 240V, ID = 59A
V
Gate-Source Charge -- 22 -- nC
GS
Gate-Drain Charge -- 40 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current -- -- 59 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 236 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 59A
/dt =100A/µs
dI
Reverse Recovery Charge -- 6.9 -- µC
F
= 250µA 300 -- -- V
D
= 240V, T
= 10V, I
--
= 125°C
C
= 250µA3.0--5.0V
D
= 29.5A -- 0.047 0.056 Ω
D
(Note 4)
--
-- 52 -- S
--
--
-- 3590 4670 pF
-- 140 290 ns
(Note 4, 5)
-- 77 100 nC
= 10V
(Note 4, 5)
-- 246 -- ns
(Note 4)
10
1
µA
µA
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.83mH, IAS = 59A, VDD = 50V, R
3. I
≤ 59A, di/dt ≤ 200A/µs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
= 25Ω, Starting TJ = 25°C
G
, Starting T
DSS
= 25°C
J
FDA59N30 Rev. A
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDA59N30 300V N-Channel MOSFET
2
10
1
10
, Drain Current [A]
D
I
0
10
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
-1
GS
0
10
VDS, Drain-Source Voltage [ V]
2
10
Notes :
※
1. 250µ s Pulse Test
2. T
= 25
℃
C
1
10
1
10
, Drain Current [A]
D
I
0
10
24681012
150oC
25oC
VGS, Gate-Source Voltage [V]
-55oC
※
1. VDS = 40V
2. 250µ s Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.12
0.11
0.10
0.09
[Ω ],
0.08
DS(ON)
R
0.07
0.06
Drain-Source On-Resistance
0.05
0.04
0 25 50 75 100 125 150 175
VGS = 10V
ID, Drain Current [A]
※
VGS = 20V
Note : T
2
10
= 25
℃
J
1
10
, Reverse Dr ain Current [A]
DR
I
0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
150
℃
VSD, Source-Drain voltage [V]
25
℃
Notes :
※
1. VGS = 0V
2. 250µ s Pul se Test
Notes :
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
9000
6000
3000
Capacitances [pF]
FDA59N30 Rev. A
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
oss
C
iss
Note ;
※
10
1
1. VGS = 0 V
2. f = 1 MHz
C
rss
0
-1
10
0
10
VDS, Drain-Source Voltage [V]
12
10
8
VDS = 60V
VDS = 150V
VDS = 240V
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 1020304050607080
QG, Total Gate Charge [nC]
3
※
Note : I
= 59A
D
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