Fairchild FDA59N25 service manual

September 2005

UniFET

FDA59N25 250V N-Channel MOSFET

TM

FDA59N25

250V N-Channel MOSFET

Features

• 59A, 250V, R

• Low gate charge (typical 63 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

(typical 70 pF)

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Absolute Maximum Ratings

= 0.049Ω @VGS = 10 V

DS(on)

GSD

TO-3PN

FDA Series

VDS = 250V
V

DS(Avalanche)

R

DS(on)

= 300V

T yp. @10V = 41mΩ

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switched mode power supplies and active power factor
correction.

D

{

{

z

z









z

G

{

{

z
z

z

{

{

S

Symbol Parameter FDA59N25 Unit

V

DSS

V

DS(Avalanche)

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

Drain-Source Voltage 250 V
Repetitive Avalanche Voltage
Drain Current - Continuous (TC = 25°C)

- Continuous (T Drain Current - Pulsed Gate-Source voltage ±30 V Single Pulsed Avalanche Energy Avalanche Current (Note 1) 59 A Repetitive Avalanche Energy (Note 1) 39.2 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1, 2)

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

300 V

59
35

236 A

1458 mJ

392

3.2

300 °C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.32 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

A
A

W

W/°C

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDA59N25 Rev. A

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA59N25 FDA59N25 TO-3PN -- -- 30

FDA59N25 250V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.67mH, IAS = 59A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 59A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V

= 250µA, Referenced to 25°C--0.25--V/°C

I

D

= 200V, TC = 125°C

V

DS

--

--

--

--

1

10

µA
µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source

On-Resistance
Forward Transconductance VDS = 40V, ID = 29.5A

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 630 820 pF

= 10V, ID = 29.5A -- 0.041 0.049 Ω

V

GS

(Note 4)

-- 45 -- S

-- 3090 4020 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 70 110 pF

Turn-On Delay Time VDD = 125V, ID = 59A

= 25Ω

R

Turn-On Rise Time -- 480 970 ns

G

-- 70 150 ns

Turn-Off Delay Time -- 90 190 ns
Turn-Off Fall Time -- 170 350 ns
Total Gate Charge VDS = 200V, ID = 59A

= 10V

V

Gate-Source Charge -- 18.5 -- nC

GS

Gate-Drain Charge -- 30 -- nC

(Note 4, 5)

-- 63 82 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 59 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 236 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A -- -- 1. 4 V
Reverse Recovery Time VGS = 0V, IS = 59A

/dt =100A/µs (Note 4)

dI

Reverse Recovery Charge -- 4.4 -- µC

, Starting TJ = 25°C

DSS

F

-- 190 -- ns

FDA59N25 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDA59N25 250V N-Channel MOSFET

V
Top : 15.0 V

2

10.0 V

10

8.0 V

7.0 V

6.5 V
Bottom : 6.0 V

GS

2

10

150°C

1

10

, Drain Current [A]

D

I

0

10

-1

10

0

10

* Notes :

1. 250

2. T

1

10

µs Pulse Test

= 25°C

C

VDS, Drain-Source Voltage [V]

1

10

, Drain Current [A]

D

I

0

10

2 4 6 8 10 12

25°C

-55°C

* Notes :

1. V

2. 250

DS

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.15

0.12

0.09

[Ω],

DS(ON)

0.06

R

0.03

Drain-Source On-Resistance

0.00
0 25 50 75 100 125 150 175

VGS = 10V

ID, Drain Current [A]

VGS = 20V

* Note : TJ = 25°C

2

10

1

10

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

150°C

VSD, Source-Drain voltage [V]

25°C

* Notes :

1. V

GS

2. 250

= 40V

µs Pulse T est

= 0V

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

8000

6000

4000

Capacitances [pF]

2000

0

-1

10

FDA59N25 Rev. A

C

oss

C

iss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

* Note ;

1. V

2. f = 1 MHz

1

10

= 0 V

GS

3 www.fairchildsemi.com

12

10

8

VDS = 50V
VDS = 125V
VDS = 200V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040506070

QG, Tota l Gate Cha rg e [nC ]

* Note : ID = 59A