FDA38N30
TO-3PN
FDA Series
GSD
D
G
S
N-Channel MOSFET
300V, 38A, 0.085Ω
January 2012
UniFET
FDA38N30 N-Channel MOSFET
TM
Features
• R
• Low gate charge ( typical 60 nC)
•Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD Improved capability
•RoHS Compliant
MOSFET Maximum Ratings T
= 0.07Ω ( Typ.) @ VGS = 10V, ID = 19A
DS(on)
( typical 60 pF)
rss
= 25oC unless otherwise noted
C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology
This advanced technology has been especially t
mize on-state resistance, provide sup
mance, and withstand high energy p
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
ection.
corr
.
ailored to mini-
erior switching perfor-
ulse in the avalanche and
Symbol Parameter FDA38N30 Unit
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain to Source Voltage 300 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 38 A
Repetitive Avalanche Energy (Note 1) 31 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-Continuous (TC = 25oC) 38
-Continuous (T
- Pulsed
(T
= 25oC) 312
C
- Derate above 25
= 100oC) 22
C
(Note 1)
(Note 2)
(Note 3) 4.5 V/ns
o
C 2.5
150 A
1200 mJ
300 °C
W/
A
W
o
C
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
θCS
R
θJA
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FDA38N30 Rev. C0
Thermal Resistance, Junction-to-Case - 0.4 °C/W
Thermal Resistance, Case-to-Sink 0.24 - °C/W
Thermal Resistance, Junction-to-Ambient - 40 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape W i dth Quantity
FDA38N30 FDA38N30 TO-3PN - - 30
FDA38N30 N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 300 - - V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
= 250μA, Referenced to 25°C - 0.3 - V/°C
I
D
V
= 300V, V
DS
V
= 240V, TC = 125oC
DS
= ±30V, V
V
GS
GS
DS
= 0V
= 0V
- - 1
- - 10
- -
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 - 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 20V, ID = 19A
V
= 10V, ID = 19A
GS
(Note 4)
Input Capacitance
= 25V, VGS = 0V
V
Output Capacitance - 500 - pF
DS
f = 1MHz
-
0.07 0.085 Ω
- 6.3 - S
- 2600 - pF
Reverse Transfer Capacitance - 60 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
= 240V, ID = 38A
V
DS
V
= 10V
GS
(Note 4, 5)
Turn-On Delay Time
= 150V, ID = 38A
V
Turn-On Rise Time - 110 143 ns
Turn-Off Del ay Time - 11 8 153 ns
Turn-Off Fal l Time - 54 70 ns
DD
= 25Ω, VGS = 10V
R
G
(Note 4, 5)
- 60 - nC
- 17 - nC
- 28 - nC
- 53 69 ns
Maximum Continuous Drain to Source Diode Forward Current - - 38 A
Maximum Pulsed Drain-Source Diode Forward Current - - 150 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time VGS = 0V, I
Reverse Recovery Charge - 4.0 - μC
= 0V, I
GS
/dt = 100A/μs (Note 4)
dI
F
= 38A - - 1.4 V
SD
= 38A
SD
- 315 - ns
±100
μA
nA
NOTES:
1. Repetitive Rating: Pulse width limite
2. L = 1.7mH, IAS = 38A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. I
≤ 38A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
d by maximum junction temperature
, Starting TJ = 25°C
DSS
FDA38N30 Rev. C0
2 www.fairchildsemi.com
Typical Performance Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15. 0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes:
1. 250
μs Pul se Test
2. T
C
= 25oC
I
D
, Drain Current [A]
VDS, Drai n-Source Voltage [ V]
24681012
10
0
10
1
10
2
150oC
25oC
-55oC
* Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
I
D
, Drain Current [A]
VGS, Gate-Source Voltage [V]
0 25 50 75 100 125
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
VGS = 20V
VGS = 10V
* Note : TJ = 25
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0. 6 0.8 1.0 1.2 1.4 1. 6 1.8
10
0
10
1
10
2
150oC
* Notes:
1. V
GS
= 0V
2. 250
μs Pulse Test
25oC
I
DR
, Reverse Drain Current [A]
VSD, Source-Drai n voltage [ V]
10
-1
10
0
10
1
0
2000
4000
6000
C
iss
= Cgs + Cgd (Cds = short ed)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 102030405060
0
2
4
6
8
10
12
VDS = 150V
VDS = 60V
VDS = 240V
? Note : ID = 38A
V
GS
, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
FDA38N30 N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDA38N30 Rev. C0
3 www.fairchildsemi.com
Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 250uA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 19A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
10
20
30
40
I
D
, Drain Current [A]
TC, Case Temperature [oC]
110100500
0.01
0.1
1
10
100
1000
10μs
100μs
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
DC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.01
0.1
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θJC
(t) = 0.4oC/W Max.
2. Duty Factor, D= t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
FDA38N30 N-Channel MOSFET
Figure 11. Transient Thermal Response Curve
FDA38N30 Rev. C0
4 www.fairchildsemi.com
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)tr
t
on
t
off
t
d(off )
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)tr
t
on
t
off
t
d(off )
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA38N30 N-Channel MOSFET
FDA38N30 Rev. C0
5 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
FDA38N30 N-Channel MOSFET
FDA38N30 Rev. C0
6 www.fairchildsemi.com
Mechanical Dimensions
FDA38N30 N-Channel MOSFET
TO-3PN
FDA38N30 Rev. C0
Dimensions in Millimeters
7 www.fairchildsemi.com
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®
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tm
tm
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SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
FDA38N30 N-Channel MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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Definition of Terms
.
2. A critical component in any component of a life support, device, or
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effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDA38N30 Rev. C0
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
8 www.fairchildsemi.com
Rev. I61
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