Fairchild FDA38N30 service manual

FDA38N30

TO-3PN FDA Series

GSD

D

G

S

N-Channel MOSFET

300V, 38A, 0.085Ω

January 2012

UniFET

FDA38N30 N-Channel MOSFET

TM

Features

• R

• Low gate charge ( typical 60 nC)

•Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• ESD Improved capability

•RoHS Compliant

MOSFET Maximum Ratings T

= 0.07Ω ( Typ.) @ VGS = 10V, ID = 19A

DS(on)

( typical 60 pF)

rss

= 25oC unless otherwise noted

C

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology

This advanced technology has been especially t mize on-state resistance, provide sup mance, and withstand high energy p commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor

ection.

corr

.

ailored to mini-

erior switching perfor-

ulse in the avalanche and

Symbol Parameter FDA38N30 Unit

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain to Source Voltage 300 V

Gate to Source Voltage ±30 V

Drain Current

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 38 A

Repetitive Avalanche Energy (Note 1) 31 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

-Continuous (TC = 25oC) 38

-Continuous (T

- Pulsed

(T

= 25oC) 312

C

- Derate above 25

= 100oC) 22

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

o

C 2.5

150 A

1200 mJ

300 °C

W/

A

W

o

C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

FDA38N30 Rev. C0

Thermal Resistance, Junction-to-Case - 0.4 °C/W

Thermal Resistance, Case-to-Sink 0.24 - °C/W

Thermal Resistance, Junction-to-Ambient - 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape W i dth Quantity

FDA38N30 FDA38N30 TO-3PN - - 30

FDA38N30 N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

ΔBV / ΔT

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 300 - - V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

= 250μA, Referenced to 25°C - 0.3 - V/°C

I

D

V

= 300V, V

DS

V

= 240V, TC = 125oC

DS

= ±30V, V

V

GS

DS

= 0V

- - 1

- - 10

- -

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 - 5.0 V

Static Drain-Source On-Resistance

Forward Transconductance VDS = 20V, ID = 19A

V

= 10V, ID = 19A

GS

(Note 4)

Input Capacitance

= 25V, VGS = 0V

V

Output Capacitance - 500 - pF

DS

f = 1MHz

-

0.07 0.085 Ω

- 6.3 - S

- 2600 - pF

Reverse Transfer Capacitance - 60 - pF

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

= 240V, ID = 38A

V

DS

V

= 10V

GS

(Note 4, 5)

Turn-On Delay Time

= 150V, ID = 38A

V

Turn-On Rise Time - 110 143 ns

Turn-Off Del ay Time - 11 8 153 ns

Turn-Off Fal l Time - 54 70 ns

DD

= 25Ω, VGS = 10V

R

G

(Note 4, 5)

- 60 - nC

- 17 - nC

- 28 - nC

- 53 69 ns

Maximum Continuous Drain to Source Diode Forward Current - - 38 A

Maximum Pulsed Drain-Source Diode Forward Current - - 150 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time VGS = 0V, I

Reverse Recovery Charge - 4.0 - μC

= 0V, I

GS

/dt = 100A/μs (Note 4)

dI

F

= 38A - - 1.4 V

SD

= 38A

SD

- 315 - ns

±100

μA

nA

NOTES:

1. Repetitive Rating: Pulse width limite

2. L = 1.7mH, IAS = 38A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. I

≤ 38A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

d by maximum junction temperature

, Starting TJ = 25°C

DSS

FDA38N30 Rev. C0

2 www.fairchildsemi.com

Typical Performance Characteristics

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top : 15. 0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

* Notes:

1. 250

μs Pul se Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drai n-Source Voltage [ V]

24681012

10

0

10

1

10

2

150oC

25oC

-55oC

* Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

0 25 50 75 100 125

0.05

0.06

0.07

0.08

0.09

0.10

0.11

0.12

0.13

VGS = 20V

VGS = 10V

* Note : TJ = 25

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0. 6 0.8 1.0 1.2 1.4 1. 6 1.8

10

0

10

1

10

2

150oC

* Notes:

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drai n voltage [ V]

10

-1

10

0

10

1

0

2000

4000

6000

C

iss

= Cgs + Cgd (Cds = short ed)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 102030405060

0

2

4

6

8

10

12

VDS = 150V

VDS = 60V

VDS = 240V

? Note : ID = 38A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FDA38N30 N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDA38N30 Rev. C0

3 www.fairchildsemi.com

Fairchild FDA38N30 service manual

Specifications and Main Features

Frequently Asked Questions

User Manual

FDA38N30

N-Channel MOSFET

Operating and Storage Temperature Range -55 to +150 °C

(Note 3) 4.5 V/ns

1200 mJ

Thermal Resistance, Case-to-Sink 0.24 - °C/W

FDA38N30 FDA38N30 TO-3PN - - 30

= 250μA, Referenced to 25°C - 0.3 - V/°C

0.07 0.085 Ω

- 2600 - pF