Fairchild FDA28N50F service manual
FDA28N50F
D
G
S
TO-3PN
GSD
N-Channel MOSFET
500V, 28A, 0.175Ω
FDA28N50F N-Channel MOSFET
January 2012
TM
UniFET
Features
•R
• Low Gate Charge ( Typ. 80nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
T
L
= 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A
DS(on)
( Typ. 38pF)
rss
= 25oC unless otherwise noted
C
Symbol Parameter Ratings Units
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 310 W
C
- Derate above 25
STG
Drain Current
Drain Current - Pulsed (Note 1) 112 A
Single Pulsed Avalanche Energy (Note 2) 2352 mJ
Avalanche Current (Note 1) 28 A
Repetitive Avalanche Energy (Note 1) 31 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 28
C
= 100oC) 17
C
o
C2.5W/
300
o
o
A
o
C
C
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
θCS
R
θJA
©2012 Fairchild Semiconductor Corporation
FDA28N50F Rev.C0
Thermal Resistance, Junction to Case 0.4
Thermal Resistance, Case to Sink Typ. 0.24
Thermal Resistance, Junction to Ambient 40
o
C/WR
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDA28N50F FDA28N50F TO-3PN - - 30
FDA28N50F N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.7-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 14A - 0.140 0.175 Ω
Forward Transconductance VDS = 20V, ID = 14A (Note 4) -35-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 566 753 pF
Reverse Transfer Capacitance - 38 56 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 22 - nC
Gate to Drain “Miller” Charge - 31 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 137 285 ns
Turn-Off Delay Time - 192 395 ns
Turn-Off Fall Time - 101 212 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 400V, ID = 28A
DS
V
= 10V
GS
( Note 4, 5)
= 250V, ID = 28A
V
DD
R
= 25Ω
G
( Note 4, 5)
- 3975 5387 pF
- 80 105 nC
- 67 145 ns
μA
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6mH, I
≤ 28A, di/dt ≤ 200A/μs, VDD ≤ BV
3. I
SD
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA28N50F Rev.C0
Maximum Continuous Drain to Source Diode Forward Current - - 28 A
Maximum Pulsed Drain to Source Diode Forward Current - - 112 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.38 - μC
= 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 28A - - 1.5 V
SD
= 28A
SD
2
- 266 - ns
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Typical Performance Characteristics
0.1 1 10
1
10
100
20
0.3
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.06
45678
1
10
100
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
150
0 25 50 75 100
0.10
0.15
0.20
0.25
0.30
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.6 1.0 1.4
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
150
0.1 1 10
0
2000
4000
6000
8000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0 20406080100
0
2
4
6
8
10
*Note: ID = 28A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDA28N50F N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDA28N50F Rev.C0
3
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