Fairchild FDA24N50 service manual

FDA24N50

N-Channel MOSFET

500V, 24A, 0.19Ω

FDA24N50 N-Channel MOSFET

August 2008

TM

UniFET

Features

•R

• Low gate charge ( Typ. 65nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

T

L

= 0.16Ω ( Typ.)@ VGS = 10V, ID = 12A

DS(on)

( Typ. 35pF)

rss

GSD

Symbol Parameter Ratings Units

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 96 A

Single Pulsed Avalanche Energy (Note 2) 1872 mJ

Avalanche Current (Note 1) 24 A

Repetitive Avalanche Energy (Note 1) 2.7 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-3PN

C

= 25oC unless otherwise noted

-Continuous (T

-Continuous (T

(T

= 25oC) 270 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advance technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switching mode power supplies and active power factor
correction.

D

G

S

= 25oC) 24

C

= 100oC) 14

C

o

C2.2W/

300

o

o

A

o

C

C

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

θCS

R

θJA

©2008 Fairchild Semiconductor Corporation
FDA24N50 Rev. A

Thermal Resistance, Junction to Case 0.46

Thermal Resistance, Case to Sink Typ. 0.24

Thermal Resistance, Junction to Ambient 40

o

C/WR

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA24N50 FDA24N50 TO-3PN - - 30

FDA24N50 N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC - 0.66 - V/oC

D

V

= 500V, V

DS

= 400V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 12A - 0.16 0.19 Ω

Forward Transconductance VDS = 20V, ID = 12A (Note 4) -28-S

Dynamic Characteristics

C

C

C

Q

Q

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 460 615 pF

Reverse Transfer Capacitance - 35 52 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 18 - nC

Gate to Drain “Miller” Charge - 26 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 108 226 ns

Turn-Off Delay Time - 164 338 ns

Turn-Off Fall Time - 86 182 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 400V, ID = 24A

DS

V

= 10V

GS

( Note 4, 5)

= 250V, ID = 24A

V

DD

R

= 25Ω

G

( Note 4, 5)

- 3120 4150 pF

-6585nC

- 47 104 ns

μA

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 6.5mH, I

≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDA24N50 Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 24 A

Maximum Pulsed Drain to Source Diode Forward Current - - 96 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 8.1 - μC

= 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 24A - - 1.4 V

SD

= 24A

SD

2

- 540 - ns

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

60

10

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

100

150oC

10

-55oC

FDA24N50 N-Channel MOSFET

,Drain Current[A]

D

I

1

0.5

0.1 1 10

*Notes:

1. 250

2. T

μs Pulse Test

= 25oC

C

VDS,Drain-Source Voltage[V]

,Drain Current[A]

D

I

1

45678

VGS,Gate-Source Voltage[V]

25oC

*Notes:

1. V

2. 250

= 20V

DS

μs Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.35

0.30

0.25

[Ω],

0.20

DS(ON)

R

0.15

Drain-Source On-Resistance

0.10
0 20406080

ID, Drain Current [A]

VGS = 10V

VGS = 20V

*Note: TJ = 25oC

150

100

150oC

10

, Reverse Drain Current [A]

S

I

1

0.2 0.6 1.0 1.4

25oC

*Notes:

1. VGS = 0V

μs Pulse Test

2. 250

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

7500

6000

4500

3000

Capacitances [pF]

1500

FDA24N50 Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

rss

0

0.1 1 10

= C

gd

gd

*Note:

1. V

2. f = 1MHz

C

C

oss

C

VDS, Drain-Source Voltage [V]

10

VDS = 100V

= 250V

V

DS

= 400V

V

DS

GS

8

= 0V

6

iss

4

, Gate-Source Voltage [V]

GS

V

2

rss

30

0

0204060

*Note: ID = 24A

70

Qg, Total Gate Charge [nC]

3

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