Fairchild FDA24N40F service manual

tm

FDA24N40F

N-Channel MOSFET, FRFET

400V, 23A, 0.19Ω

FDA24N40F N-Channel MOSFET

December 2007

TM

UniFET

Features

•R

• Low gate charge (Typ. 46nC)

• Low Crss (Typ.25pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt apability

• RoHS compliant

= 0.15Ω ( Typ.)@ VGS = 10V, ID = 11.5A

DS(on)

Descripition

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

D

G

TO-3PN

GSD

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

STG

T

L

Drain to Source Voltage 400 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 92 A

Single Pulsed Avalanche Energy (Note 2) 1190 mJ

Avalanche Current (Note 1) 23 A

Repetitive Avalanche Energy (Note 1) 23.5 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 235 W

C

- Derate above 25

= 25oC) 23

C

= 100oC) 13.8

C

o

C1.8W/

S

o

300

o

A

o

C

C

C

Thermal Characteristics

Symbol Parameter Min. Max. Units

R

θJC

θCS

R

θJA

Thermal Resistance, Junction to Case - 0.53

Thermal Resistance, Case to Sink Typ. 0.24 -

Thermal Resistance, Junction to Ambient - 40

©2007 Fairchild Semiconductor Corporation
FDA24N40F Rev. A

o

C/WR

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FDA24N40F N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDA24N40F FDA24N40F TO-3PN - - 30

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 400 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.5-V/

D

V

= 400V, V

DS

= 320V, TC = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 11.5A - 0.15 0.19 Ω

Forward Transconductance VDS = 20V, ID = 11.5A (Note 4) -29-S

Input Capacitance

Output Capacitance - 370 490 pF

Reverse Transfer Capacitance - 25 38 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 13 - nC

Gate to Drain “Miller” Charge - 18 - nC

= 25V, VGS = 0V

V

DS

f = 1MHz

= 320V

V

DS

I

= 23A

D

(Note 4, 5)

- 2280 3030 pF

-4660nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 92 195 ns

Turn-Off Delay Time - 120 250 ns

Turn-Off Fall Time - 75 160 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 4.5mH, I

≤ 23A, di/dt ≤ 200A/µs, VDD ≤ BV

3: I

SD

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 23 A

Maximum Pulsed Drain to Source Diode Forward Current - - 92 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 0.3 - µC

= 23A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC

AS

, Starting TJ = 25°C

DSS

= 200V, ID = 23A

V

DS

R

= 25Ω

G

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 23A - - 1.5 V

SD

= 23A

SD

-4090ns

(Note 4, 5)

-110 -ns

FDA24N40F Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

70

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

10

6.0 V

5.5 V

1

,Drain Current[A]

D

I

*Notes:

1. 250

µs Pulse Test

= 25oC

2. T

0.1

0.02

0.1 1 10

C

15

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.36

100

10

,Drain Current[A]

D

I

1

45678

150oC

25oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

VGS,Gate-Source Voltage[V]

200

FDA24N40F N-Channel MOSFET

0.32

100

0.28

[Ω],

0.24

DS(ON)

R

0.20

0.16

Drain-Source On-Resistance

VGS = 10V

VGS = 20V

*Note: TJ = 25oC

0.12
0 20406080

ID, Drain Current [A]

150oC

10

, Reverse Drain Current [A]

S

I

1

0.0 0.4 0.8 1.2 1.6

VSD, Body Diode Forward Voltage [V]

25oC

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000

4000

3000

C

C

oss

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

iss

2000

Capacitances [pF]

1000

C

rss

0

0.1 1 10
VDS, Drain-Source Voltage [V]

gd

gd

*Note:

1. V

= 0V

GS

2. f = 1MHz

30

10

VDS = 100V
V

= 200V

8

V

DS

= 320V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

*Note: ID = 23A

0

0 1020304050

Qg, Total Gate Charge [nC]

FDA24N40F Rev. A

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